Search Results - "Antoszewski, J."

Electronic Transport in Ultra-Narrow-Bandgap InAs/InGaSb Superlattices on Conductive GaSb Substrates.

Authors: Umana-Membreno, G. A. Kala, H. Patrashin, M. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8286-8293, 8p

Interfacial Characteristics of HgCdTe Infrared Detectors Grown on Alternative Substrates.

Authors: Li, Yuanyuan Liao, Qingjun Li, Huihao et al.

Source: Sensors (14248220). Feb2026, Vol. 26 Issue 4, p1132. 10p.

Cryogenic Super-Resolution Imaging of Local Photocurrent in Photoconductive Infrared Detectors.

Authors: Ma, Lei Wang, Nili Sun, Liaoxin et al.

Source: Sensors (14248220). May2026, Vol. 26 Issue 10, p3115. 11p.

Effect of lattice mismatch on orientation of MBE grown CdTe on GaAs(211)

Authors: Tyagi, Subodh Meena, Udai Ram Kumar, Sanjay et al.

Source: Journal of Materials Science: Materials in Electronics; Jun2025, Vol. 36 Issue 16, p1-8, 8p

HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications.

Authors: Umana-Membreno, G. A. Kala, H. Gu, R. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8363-8371, 9p

Identification and Mitigation Strategies of Etch Pit-Associated Defects in MBE-Grown HgCdTe Thin Films: Identification and Mitigation Strategies of Etch-pit-associated: H. Cao et al.

Authors: Cao, Hechun Zhao, Dongyang Hu, Tao et al.

Source: Journal of Electronic Materials; Apr2025, Vol. 54 Issue 4, p2913-2920, 8p

Effect of special gate metals on polarization Coulomb field scattering in AlGaN/GaN high electron mobility transistors.

Authors: Gao, Zhiliang Cheng, Qianding Han, Yanhui et al.

Source: Applied Physics A: Materials Science & Processing. Mar2025, Vol. 131 Issue 3, p1-6. 6p.

Characteristics of MIS Structures Based on HgCdTe with a Superlattice in the Barrier Region.

Authors: Voitsekhovskii, A. V. Dzyadukh, S. M. Gorn, D. I. et al.

Source: Journal of Communications Technology & Electronics; Feb2025, Vol. 70 Issue 2, p52-56, 5p

Determination of the Electrical Properties of the HgCdTe nB(SL)n-Based MIS Structure in a Wide Temperature Range.

Authors: Voitsekhovskii, A. V. Dzyadukh, S. M. Gorn, D. I. et al.

Source: Journal of Communications Technology & Electronics; Feb2025, Vol. 70 Issue 2, p46-51, 6p

Junction Modeling and Experimentation of Small-Pitch MWIR n-on-p HgCdTe Photodiodes with 3D Simulator Solution.

Authors: Gan, Zhikai Zhao, Yu Sun, Quanzhi et al.

Source: Journal of Electronic Materials; Jul2025, Vol. 54 Issue 7, p5723-5730, 8p

Assessment of n + np HgCdTe/CdZnTe-Based Midwave Infrared Radiation Structure for Small-Scale Focal Plane Array.

Authors: Singh, Rekha Srivastava, Vanya Pandey, Akhilesh et al.

Source: Journal of Electronic Materials; Jun2025, Vol. 54 Issue 6, p4767-4776, 10p

Effect of Mechanical Properties of HgCdTe Solid Alloys on Reliability of Photodetectors (a Review).

Authors: Iakovleva, N. I. Boltar, K. O. Vlasov, P. V. et al.

Source: Journal of Communications Technology & Electronics; Jun2025, Vol. 70 Issue 6, p299-307, 9p

Carrier Transport Control for Enhanced Performance in Dual-Color Quantum Well Infrared Photodetectors.

Authors: Chen, Zhen Xin, Rui Wang, Shenjun et al.

Source: Nanomaterials (2079-4991). May2026, Vol. 16 Issue 9, p554. 12p.

Subjects: Quantum well devices, Infrared detectors, Photodetectors, Charge carrier mobility, Optoelectronics, Electronic band structure

Hybrid ionic–electronic semiconductors for interface engineering of ultra-low-dark-current solution-processed SWIR photodetectors.

Authors: Cao, Yunhao Yang, Xiye Wang, Yazhong et al.

Source: National Science Review. Jan2026, Vol. 13 Issue 2, p1-13. 13p.

Annealing of MBE-grown CdTe epitaxial layer at various tellurium overpressure for reduced defect density.

Authors: Tyagi, Subodh Goyal, Anshu Rana, Sovinder Singh et al.

Source: Journal of Materials Science: Materials in Electronics; May2024, Vol. 35 Issue 14, p1-10, 10p

Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.

Authors: Voitsekhovskii, A. V. Dzyadukh, S. M. Gorn, D. I. et al.

Source: Journal of Communications Technology & Electronics; 2023 Suppl 2, Vol. 68, pS132-S137, 6p

Infrared Imaging for Autonomous Power Inspection: A Review from Detector to System Integration.

Authors: Guo, Yingye Du, Yuxi Mao, Run et al.

Source: Sensors (14248220). Jun2026, Vol. 26 Issue 11, p3552. 62p.

A Comprehensive Review of Two-Dimensional Rhenium Diselenide (ReSe2): Fundamentals of Electronic and Optoelectronic Applications.

Authors: Aydin, Büşra Yazici, İbrahim Coşkun, Ayça et al.

Source: Journal of Electronic Materials; Apr2025, Vol. 54 Issue 4, p2546-2569, 24p

High Reflectivity, Compact, and Widely Tunable Distributed Bragg Reflector Based on Silicon-Rich SiN x -SiO y at 80 °C PECVD.

Authors: Rodríguez Lamoso, Irene Preu, Sascha

Source: Applied Sciences (2076-3417); Mar2025, Vol. 15 Issue 6, p3330, 11p

Fabrication of Granular-Ni/MgO/Ni-Based TMR Devices Exhibiting Oscillatory Tunneling Magnetoresistance with Increasing Magnetic Field at Room Temperature.

Authors: Pokhriyal, Sumit Biswas, Somnath

Source: Journal of Electronic Materials; Mar2025, Vol. 54 Issue 3, p2038-2048, 11p