Search Results - "Bernier J"

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  1. 1

    Measuring Stress Distributions in Ti-6Al-4V Using Synchrotron X-Ray Diffraction.

    Authors: Bernier, J. V. Park, J.-S. Pilchak, A. L.

    Source: Metallurgical & Materials Transactions. Part A; Dec2008, Vol. 39A Issue 13, p3120-3133, 14p

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  2. 2

    Time-resolved X-ray diffraction diagnostic development for the National Ignition Facility.

    Authors: Werellapatha, K. Palmer, N. E. Gorman, M. G. et al.

    Source: Review of Scientific Instruments; Jan2024, Vol. 95 Issue 1, p1-18, 18p

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  3. 3

    Symmetric-conjugate splitting methods for linear unitary problems.

    Authors: Bernier, J. Blanes, S. Casas, F. et al.

    Source: BIT: Numerical Mathematics; Dec2023, Vol. 63 Issue 4, p1-26, 26p

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  4. 4

    A multiscale strength model for extreme loading conditions.

    Authors: Barton, N. R. Bernier, J. V. Becker, R.

    Source: Journal of Applied Physics; Apr2011, Vol. 109 Issue 7, p073501-1-073501-12, 12p

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  8. 8

    Implementation of a Comprehensive and Robust MOSFET Model in Cadence SPICE for ESD Applications.

    Authors: Gao, X. F. Liou, J. J. Bernier, J.

    Source: IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems; December 2002, Vol. 21 Issue 12, p1497-1502, 6p

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  12. 12

    An improved model for substrate current of submicron MOSFETs.

    Authors: Gao, X. Liou, J. J. Bernier, J. et al.

    Source: Solid-State Electronics; September 2002, Vol. 46 Issue 9, p1395-1398, 4p

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  15. 15

    A physics-based model for the substrate resistance of MOSFETs.

    Authors: Gao, X. F. Liou, J. J. Ortiz-Conde, A. et al.

    Source: Solid-State Electronics; June 2002, Vol. 46 Issue 6, p853-857, 5p

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