Search Results - "Cheng, Osbert"

Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes.

Authors: Ciou, Fong-Min Lin, Jia-Hong Chen, Po-Hsun et al.

Source: IEEE Electron Device Letters; Oct2021, Vol. 42 Issue 10, p1420-1423, 4p

Investigation of HCD- and NBTI-Induced Ultralow Electric Field GIDL in 14-nm Technology Node FinFETs.

Authors: Ciou, Fong-Min Hsu, Jui-Tse Chang, Ting-Chang et al.

Source: IEEE Transactions on Electron Devices; Jul2020, Vol. 67 Issue 7, p2697-2701, 5p

Replacement Gate High-k/Metal Gate nMOSFETs Using a Self-Aligned Halo-Compensated Channel Implant.

Authors: Lee, Zhi-Cheng Chin, Li-Feng Lee, Kai-Lin et al.

Source: IEEE Transactions on Electron Devices; Jun2020, Vol. 67 Issue 6, p2232-2237, 6p

Abnormal Increment Substrate Current After Hot Carrier Stress in n-FinFET.

Authors: Lin, Yu-Shan Hung, Wei-Chun Chang, Kai-Chun et al.

Source: IEEE Electron Device Letters; Jan2020, Vol. 41 Issue 1, p15-18, 4p

Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node.

Authors: Chang, Kai-Chun Liao, Jih-Chien Chang, Ting-Chang et al.

Source: IEEE Electron Device Letters; Apr2019, Vol. 40 Issue 4, p498-501, 4p

A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak Path.

Authors: Hsieh, E. Ray Yen Chen Kuo Chih-Hung Cheng et al.

Source: IEEE Transactions on Electron Devices; Dec2017, Vol. 64 Issue 12, p4910-4918, 9p

Effects of fabrication method on defects induced by nitrogen diffusion to the hafnium oxide layer in metal–oxide–semiconductor field effect transistors.

Authors: Lu, Ying-Hsin Chang, Ting-Chang Ho, Szu-Han et al.

Source: Thin Solid Films; Dec2016, Vol. 620, p43-47, 5p

Impact of post-metal deposition annealing temperature on performance and reliability of high-K metal-gate n-FinFETs.

Authors: Lin, Chien-Yu Chang, Ting-Chang Liu, Kuan-Ju et al.

Source: Thin Solid Films; Dec2016, Vol. 620, p30-33, 4p

Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate.

Authors: Hsi-Wen Liu Ting-Chang Chang Jyun-Yu Tsai et al.

Source: Applied Physics Letters; 4/25/2016, Vol. 108 Issue 17, p173504-1-173504-5, 5p, 1 Diagram, 4 Graphs

Analysis of Oxide Trap Characteristics by Random Telegraph Signals in nMOSFETs With HfO2-Based Gate Dielectrics.

Authors: Chen, Ching-En Chang, Ting-Chang You, Bo et al.

Source: IEEE Electron Device Letters; Apr2016, Vol. 37 Issue 4, p359-362, 4p

Impact of Uniaxial Strain on Random Telegraph Noise in High- $k$ /Metal Gate pMOSFETs.

Authors: Huang, Po-Chin Chen, Jone F. Tsai, Shih Chang et al.

Source: IEEE Transactions on Electron Devices; Mar2015, Vol. 62 Issue 3, p988-993, 6p

Abnormal temperature-dependent floating-body effect on Hot-Carrier Degradation in PDSOI n-MOSFETs.

Authors: Liu, Kuan-Ju Chang, Ting-Chang Yang, Ren-Ya et al.

Source: Thin Solid Films; Dec2014, Vol. 572, p39-43, 5p

Abnormal threshold voltage shift under hot carrier stress in Ti1-xNx/HfO2 p-channel metal-oxide-semiconductor field-effect transistors.

Authors: Tsai, Jyun-Yu Chang, Ting-Chang Lo, Wen-Hung et al.

Source: Journal of Applied Physics; Sep2013, Vol. 114 Issue 12, p124505, 5p, 6 Graphs

Impact of strain on gate-induced floating body effect for partially depleted silicon-on-insulator p-type metal–oxide–semiconductor-field-effect-transistors

Authors: Lo, Wen-Hung Chang, Ting-Chang Dai, Chih-Hao et al.

Source: Thin Solid Films; Jan2013, Vol. 528, p10-18, 9p

Analysis of anomalous traps measured by charge pumping technique in HfO2/metal gate n-channel metal-oxide-semiconductor field-effect transistors.

Authors: Ho, Szu-Han Chang, Ting-Chang Lu, Ying-shin et al.

Source: Applied Physics Letters; 12/3/2012, Vol. 101 Issue 23, p233509, 4p, 1 Diagram, 3 Graphs

Analysis of an anomalous hump in gate current after dynamic negative bias stress in HfxZr1-xO2/metal gate p-channel metal-oxide-semiconductor field-effect transistors.

Authors: Ho, Szu-Han Chang, Ting-Chang Wu, Chi-Wei et al.

Source: Applied Physics Letters; 7/30/2012, Vol. 101 Issue 5, p052105, 4p, 4 Graphs

Charge trapping induced frequency-dependence degradation in n-MOSFETs with high-k/metal gate stacks

Authors: Dai, Chih-Hao Chang, Ting-Chang Chu, Ann-Kuo et al.

Source: Thin Solid Films; Dec2011, Vol. 520 Issue 5, p1511-1515, 5p

Characteristics of \Si/SiO2 Interface Properties for CMOS Fabricated on Hybrid Orientation Substrate Using Amorphization/Templated Recrystallization (ATR) Method.

Authors: Huang, Po Chin Wu, San Lein Chang, Shoou Jinn et al.

Source: IEEE Transactions on Electron Devices; Jun2011, Vol. 58 Issue 6, p1635-1642, 8p

Electrical characteristics of nMOSFETs fabricated on hybrid orientation substrate with amorphization/templated recrystallization method

Authors: Huang, Po Chin Wu, San Lein Chang, Shoou Jinn et al.

Source: Microelectronics Reliability; May2010, Vol. 50 Issue 5, p662-665, 4p

Substrate current enhancement in 65 nm metal-oxide-silicon field-effect transistor under external mechanical stress

Authors: Kuo, Y.J. Chang, T.C. Yeh, P.H. et al.

Source: Thin Solid Films; Jan2009, Vol. 517 Issue 5, p1715-1718, 4p