Search Results - "Doi I"

Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix.

Authors: Mestanza, S. N. M. Doi, I. Swart, J. W.

Source: Journal of Materials Science; Sep2007, Vol. 42 Issue 18, p7757-7761, 5p

Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix.

Authors: Mestanza, S. N. M. Doi, I. Swart, J. W. et al.

Source: Journal of Materials Science. Sep2007, Vol. 42 Issue 18, p7757-7761. 5p. 1 Chart, 5 Graphs.

Germanium nanoparticles grown at different deposition times for memory device applications.

Authors: Mederos, M. Mestanza, S.N.M. Lang, R. et al.

Source: Thin Solid Films; Jul2016, Vol. 611, p39-45, 7p

Insulators obtained by electron cyclotron resonance plasmas on Si or GaAs

Authors: Diniz, J.A. Doi, I. Swart, J.W.

Source: Materials Characterization. Mar2003, Vol. 50 Issue 2/3, p135. 13p.

Subjects: Silicon, Nitrides, Insulating materials, Electron cyclotron resonance sources, Gallium arsenide

Structural and surface properties of Si1−x Ge x thin films obtained by reduced pressure CVD

Authors: Teixeira, R.C. Doi, I. Diniz, J.A. et al.

Source: Applied Surface Science. Oct2007, Vol. 254 Issue 1, p207-212. 6p.

Subjects: Thin films, Complementary metal oxide semiconductors, Surfaces (Technology), Thick films

Electrical characterization and morphological properties of AlN films prepared by dc reactive magnetron sputtering

Authors: Moreira, M.A. Doi, I. Souza, J.F. et al.

Source: Microelectronic Engineering. May2011, Vol. 88 Issue 5, p802-806. 5p.

Subjects: Electric properties of thin films, Magnetron sputtering, Aluminum nitride, Crystallography, Refractive index, Semiconductors, Dielectrics

Thermal stability of Ni(Pt) silicide films formed on poly-Si

Authors: Doi, I. Teixeira, R.C. Santos, R.E. et al.

Source: Microelectronic Engineering. Dec2005, Vol. 82 Issue 3/4, p485-491. 7p.

Subjects: Silicon compounds, Silicides, Layer structure (Solids), High temperatures

Micro-Raman stress characterization of polycrystalline silicon films grown at high temperature

Authors: Teixeira, R.C. Doi, I. Zakia, M.B.P. et al.

Source: Materials Science & Engineering: B. Sep2004, Vol. 112 Issue 2/3, p160-164. 5p.

Subjects: Thin films, Vapor-plating, High temperatures, Solid state electronics

Effects of temperature and deposition time on the structural and optical properties of Si1 − xGex nanoparticles grown by low pressure chemical vapor deposition.

Authors: Mederos, M. Mestanza, S.N.M. Doi, I. et al.

Source: Thin Solid Films; Mar2015, Vol. 579, p116-122, 7p

Three-dimensional organic field-effect transistors with high output current and high on-off ratio.

Authors: Uno, Mayumi Doi, I. Takimiya, K.

Source: Applied Physics Letters; March 9 2009, Vol. 94 Issue 10, p103307-103307, 1p

Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma.

Authors: Biasotto, C. Daltrini, A. M. Teixeira, R. C. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul2007, Vol. 25 Issue 4, p1166-1170, 5p, 2 Diagrams, 1 Chart, 2 Graphs

Influence of nucleation parameters in the spatial distribution of the Ge nanocrystals formed by LPCVD

Authors: Marins, E.S. Mestanza, S.N.M. Doi, I.

Source: Materials Science in Semiconductor Processing; Aug2006, Vol. 9 Issue 4/5, p828-831, 4p

Efficacy of ECR-CVD silicon nitride passivation in InGaP/GaAs HBTs.

Authors: Zoccal, L. B. Diniz, J. A. Doi, I. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Jul/Aug2006, Vol. 24 Issue 4, p1762-1765, 4p, 1 Diagram, 1 Chart, 5 Graphs

Characterization and modeling of antireflective coatings of SiO2, Si3N4, and SiOxNy deposited by electron cyclotron resonance enhanced plasma chemical vapor deposition.

Authors: Mestanza, S. N. M. Obrador, M. P. Rodriguez, E. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Mar/Apr2006, Vol. 24 Issue 2, p823-827, 5p, 8 Graphs

Natural history of true pancreaticoduodenal artery aneurysms.

Authors: TAKAO, H. DOI, I. WATANABE, T. et al.

Source: British Journal of Radiology. Sep2010, Vol. 83 Issue 993, p744-746. 3p.

Titanium nitride as electrode for MOS technology and Schottky diode: Alternative extraction method of titanium nitride work function

Authors: Lima, L.P.B. Diniz, J.A. Doi, I. et al.

Source: Microelectronic Engineering. Apr2012, Vol. 92, p86-90. 5p.

Subjects: Metal oxide semiconductor capacitors, Titanium nitride, Electrodes, Extraction (Chemistry), Schottky barrier diodes, Thin films, Silicon oxide, Microfabrication

Preparation and characterization of high-k aluminium nitride (AlN) thin film for sensor and integrated circuits applications.

Authors: Souza, J. F. Moreira, M. A. Doi, I. et al.

Source: Physica Status Solidi (C). Jun2012, Vol. 9 Issue 6, p1454-1457. 4p.

Transverse leukonychia (Mees' lines) associated with pleural empyema.

Authors: Fujita, Y. Sato-Matsumura, K. C. Doi, I. et al.

Source: Clinical & Experimental Dermatology. Jan2007, Vol. 32 Issue 1, p127-128. 2p. 1 Color Photograph.

TiN/titanium–aluminum oxynitride/Si as new gate structure for 3D MOS technology

Authors: Miyoshi, J. Lima, L.P.B. Diniz, J.A. et al.

Source: Microelectronic Engineering. Apr2012, Vol. 92, p140-144. 5p.

Thin titanium oxide films deposited by e-beam evaporation with additional rapid thermal oxidation and annealing for ISFET applications

Authors: Barros, A.D. Albertin, K.F. Miyoshi, J. et al.

Source: Microelectronic Engineering. Mar2010, Vol. 87 Issue 3, p443-446. 4p.