Search Results - "Engelhard M"

Using Thin Films to Screen Possible Scintillator Materials.

Authors: Milbrath, B. D. Caggiano, J. A. Engelhard, M. H.

Source: IEEE Transactions on Nuclear Science; June 2009 pt3, Vol. 56 Issue 3, p1650-1654, 5p

Metalorganic chemical vapor deposition of carbon-free ZnO using the bis(2,2,6,6-tetramethyl-3,5-heptanedionato)zinc precursor.

Authors: Saraf, L. V. Engelhard, M. H. Wang, C. M.

Source: Journal of Materials Research; May 2007, Vol. 22 Issue 5, p1230-1234, 5p

Nucleation and Growth of MOCVD Grown (Cr, Zn)O Films: Uniform Doping vs Secondary Phase Formation.

Authors: Saraf, L. V. Engelhard, M. F. Nachimuthu, P.

Source: Journal of the Electrochemical Society; Mar2007, Vol. 154 Issue 3, pD134-D138, 5p

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The effect of sulfur on the passivation of iron in calcium nitrate.

Authors: Windisch, C. F. Baer, D. R. Engelhard, M. H.

Source: Journal of the Electrochemical Society; September 1994, Vol. 141, p2343-2349, 7p

New calibration method for the determination of the absolute density of CH radicals through laser-induced fluorescence.

Authors: Engelhard, M. Jacob, W. Möller, W.

Source: Applied Optics; July 20 1995, Vol. 34, p4542-4551, 10p

Tyrosine protecting groups.

Authors: Engelhard, M. Merrifield, R. B.

Source: Journal of the American Chemical Society; May 24 1978, Vol. 100, p3559-3563, 5p

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First step towards the growth of single-crystal oxides on Si: formation of a two-dimensional crystalline silicate on Si(001)

Authors: Liang, Y. Gan, S. Engelhard, M.

Source: Applied Physics Letters; November 26 2001, Vol. 79 Issue 22, p3591-3593, 3p

Modelling the hydrothermomechanical properties of polymers close to glass transition.

Authors: Engelhard, M. Lion, A.

Source: ZAMM -- Journal of Applied Mathematics & Mechanics / Zeitschrift für Angewandte Mathematik und Mechanik. Feb2013, Vol. 93 Issue 2/3, p102-112. 11p.

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Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2.

Authors: Baer, D. R. Engelhard, M. H. Lea, A. S. et al.

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. Sep2010, Vol. 28 Issue 5, p1060-1072. 13p. 5 Charts, 8 Graphs.

Subjects: Sputtering (Physics), Oxides, Sedimentation & deposition, Spectrum analysis, Vacuum technology

Suppression of conductivity in Mn-doped ZnO thin films.

Authors: Oo, W. M. Hlaing Saraf, L. V. Engelhard, M. H.

Source: Journal of Applied Physics; January 1 2009, Vol. 105 Issue 1, p013715-013715, 1p

Light-Switchable Hemithioindigo–Hemistilbene-ContainingPeptides: Ultrafast Spectroscopy of the Z → E Isomerizationof the Chromophore and the Structural Dynamics of the Peptide Moiety.

Authors: Regner, N. Herzog, T. T. Haiser, K. et al.

Source: Journal of Physical Chemistry B; Apr2012, Vol. 116 Issue 14, p4181-4191, 11p

Behavior of Si and C atoms in ion amorphized SiC.

Authors: Jiang, W. Zhang, Y. Engelhard, M. H.

Source: Journal of Applied Physics; January 15 2007, Vol. 101 Issue 2, p023524-023524, 1p

Irradiation behavior of SrTiO3 at temperatures close to the critical temperature for amorphization.

Authors: Zhang, Y. Wang, C. M. Engelhard, M. H.

Source: Journal of Applied Physics; December 1 2006, Vol. 100 Issue 11, p113533-113533, 1p

Comparison of the sputter rates of oxide films relative to the sputter rate of SiO2.

Authors: Baer, D. R. Engelhard, M. H. Lea, A. S. et al.

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Sep2010, Vol. 28 Issue 5, p1060-1072, 13p, 5 Charts, 8 Graphs