Search Results - "Faraone, L."

Electronic Transport in Ultra-Narrow-Bandgap InAs/InGaSb Superlattices on Conductive GaSb Substrates.

Authors: Umana-Membreno, G. A. Kala, H. Patrashin, M. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8286-8293, 8p

HgCdTe Avalanche Photodiodes by Plasma-Induced p-to-n Type Conversion for 2-μm Wavelength Applications.

Authors: Umana-Membreno, G. A. Kala, H. Gu, R. et al.

Source: Journal of Electronic Materials; Oct2025, Vol. 54 Issue 10, p8363-8371, 9p

Investigation of Multicarrier Transport in LPE-Grown Hg1-xCdxTe Layers.

Authors: Umana-Membreno, G. A. Antoszewski, J. Faraone, L.

Source: Journal of Electronic Materials; July 2010, Vol. 39 Issue 7, p1023-1029, 7p

Application of Quantitative Mobility-Spectrum Analysis to Multilayer HgCdTe Structures.

Authors: Antoszewski, J. Faraone, L. Vurgaftman, I.

Source: Journal of Electronic Materials; Jun2004, Vol. 33 Issue 6, p673-683, 11p

Analysis of crosstalk in HgCdTe p-on-n heterojunction photovoltaic infrared sensing arrays.

Authors: Musca, C. A. Dell, J. M. Faraone, L.

Source: Journal of Electronic Materials; June 1999, Vol. 28 Issue 6, p617-623, 7p

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications.

Authors: Akhavan, N. D. Umana-Membreno, G. A. Gu, R. et al.

Source: Journal of Electronic Materials; Sep2022, Vol. 51 Issue 9, p4742-4751, 10p

Defect Engineering in MBE-Grown CdTe Buffer Layers on GaAs (211)B Substrates.

Authors: Pan, W. W. Gu, R. J. Zhang, Z. K. et al.

Source: Journal of Electronic Materials; Sep2022, Vol. 51 Issue 9, p4869-4883, 15p

Strained CdZnTe/CdTe Superlattices As Threading Dislocation Filters in Lattice Mismatched MBE Growth of CdTe on GaSb.

Authors: Pan, W. W. Gu, R. J. Zhang, Z. K. et al.

Source: Journal of Electronic Materials; Nov2020, Vol. 49 Issue 11, p6983-6989, 7p

Optical Properties of MBE-Grown Hg1−xCdxSe.

Authors: Pan, W. W. Zhang, Z. K. Lei, W. et al.

Source: Journal of Electronic Materials; Oct2019, Vol. 48 Issue 10, p6063-6068, 6p

Interdiffusion Effects on Bandstructure in HgTe-CdTe Superlattices for VLWIR Imaging Applications.

Authors: Akhavan, N. D. Umana-Membreno, G. A. Gu, R. et al.

Source: Journal of Electronic Materials; Oct2019, Vol. 48 Issue 10, p6159-6168, 10p

Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe.

Authors: Madni, I. Membreno, G. A. U. Lei, W. et al.

Source: Journal of Electronic Materials; Oct2018, Vol. 47 Issue 10, p5691-5698, 8p

Analysis of magnetic field dependent Hall data in narrow bandgap Hg1-xCdxTe grown by molecular beam epitaxy.

Authors: Antoszewski, J. Faraone, L.

Source: Journal of Applied Physics; October 1 1996, Vol. 80, p3881-3892, 12p

Characterization of deep-level defects in GaAs irradiated by 1 MeV electrons.

Authors: Lai, S. T. Nener, B. D. Faraone, L.

Source: Journal of Applied Physics; January 15 1993, Vol. 73, p640-647, 8p

Interface-state density analysis of thermally and electron-beam-annealed GaAs surfaces.

Authors: Prasad, K. Faraone, L. Nassibian, A. G.

Source: Journal of Applied Physics; May 15 1991, Vol. 69, p7146-7152, 7p

Numerical simulation of temperature distributions during electron beam annealing of multilayer semiconductor structures.

Authors: Meglicki, Z. Sumich, R. J. Faraone, L.

Source: Journal of Applied Physics; June 1 1990, Vol. 67, p7050-7058, 9p

Surface roughness and electrical conduction of oxide/polysilicon interfaces.

Authors: Faraone, L. Harbeke, G.

Source: Journal of the Electrochemical Society; July 1986, Vol. 133, p1410-1413, 4p

Current status and issues in the surface passivation technology of mercury cadmium telluride infrared detectors.

Authors: Agnihotri, O. P. Musca, C. A. Faraone, L.

Source: Semiconductor Science & Technology; August 1998, Vol. 13 Issue 8, p839-845, 7p

A gate-controlled HgCdTe long-wavelength infrared photoconductive detector.

Authors: Siliquini, J. F. Faraone, L.

Source: Semiconductor Science & Technology; August 1997, Vol. 12, p1010-1015, 6p

Two-dimensional infrared focal plane arrays based on HgCdTe photoconductive detectors.

Authors: Siliquini, J. F. Faraone, L.

Source: Semiconductor Science & Technology; December 1996, Vol. 11, p1906-1911, 6p

Annealing studies on Pd/n-GaAs Schottky diodes.

Authors: Sharda, H. Prasad, K. Faraone, L.

Source: Semiconductor Science & Technology; August 1991, Vol. 6, p765-770, 6p