Search Results - "Fujimura N"

The effects of Xe on an rf plasma and growth of ZnO films by rf sputtering.

Authors: Nagata, T. Ashida, A. Fujimura, N.

Source: Journal of Applied Physics; 4/15/2004, Vol. 95 Issue 8, p3923-3927, 5p

Magnetic and magnetotransport properties of solid phase epitaxially grown Si:Ce films.

Authors: Yokota, T. Fujimura, N. Ito, T.

Source: Journal of Applied Physics; April 1 2003, Vol. 93 Issue 7, p4045-4048, 4p

Structural characterization of ordered SiGe films grown on Ge(100) and Si(100) substrates.

Authors: Araki, T. Fujimura, N. Ito, T.

Source: Journal of Applied Physics; October 1 1996, Vol. 80, p3804-3807, 4p

Solid phase reactions and change in stress of TiN/Ti/Si for a diffusion barrier.

Authors: Fujimura, N. Matsui, T. Ito, T.

Source: Journal of Applied Physics; March 15 1990, Vol. 67, p2899-2903, 5p

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Effect of substitutionally dissolved Ce in Si on the magnetic and electric properties of magnetic semiconductor Si1-xCex films.

Authors: Yokota, T. Fujimura, N. Ito, T.

Source: Applied Physics Letters; November 18 2002, Vol. 81 Issue 21, p4023-4025, 3p

Structural, dielectric, and magnetic properties of epitaxially grown BaFeO3 thin films on (100) SrTiO3 single-crystal substrates.

Authors: Matsui, T. Tanaka, H. Fujimura, N.

Source: Applied Physics Letters; October 7 2002, Vol. 81 Issue 15, p2764-2766, 3p

Dark Current Characteristics of a Radiation Detector Array Developed Using MOVPE-Grown Thick CdTe Layers on Si Substrate.

Authors: Yasuda, K. Niraula, M. Fujimura, N. et al.

Source: Journal of Electronic Materials; Oct2012, Vol. 41 Issue 10, p2754-2758, 5p, 5 Diagrams, 2 Graphs

Multiferroic behaviour of YMnO3 and YbMnO3 epitaxial films.

Authors: Fujimura, N. Shigemitsu, N. Takahashi, T. et al.

Source: Philosophical Magazine Letters. Mar/Apr2007, Vol. 87 Issue 3/4, p193-201. 9p. 8 Graphs.

Mechanism for ordering in SiGe films with reconstructed surface.

Authors: Araki, T. Fujimura, N. Ito, T.

Source: Applied Physics Letters; September 1 1997, Vol. 71, p1174-1176, 3p

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Large enhancement of positive magnetoresistance by Ce doping in Si epitaxial thin films.

Authors: Miyata, Y. Ueno, K. Togawa, Y. et al.

Source: Applied Physics Letters; 9/12/2016, Vol. 109 Issue 11, p112101-1-112101-4, 4p, 4 Graphs

Dielectric relaxation of poly(n-hexyl isocyanate) in concentrated solutions of polybutadiene.

Authors: Hirai, T. Fujimura, N. Urakawa, O. et al.

Source: Polymer. Feb2002, Vol. 43 Issue 4, p1133-1138. 6p.

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Near-surface structure of polar ZnO surfaces prepared by pulsed laser deposition.

Authors: Nakamura, T. Yoshimura, T. Ashida, A. et al.

Source: Thin Solid Films; May2014, Vol. 559, p88-91, 4p

Crystal structure and local piezoelectric properties of strain-controlled (001) BiFeO3 epitaxial thin films.

Authors: Ujimoto, K. Yoshimura, T. Wakazono, K. et al.

Source: Thin Solid Films; Jan2014, Vol. 550, p738-741, 4p

Development of Spectroscopic Imaging Arrays Using Epitaxially Grown Thick Single Crystal CdTe Layers on Si Substrates.

Authors: Niraula, M. Yasuda, K. Fujimura, N. et al.

Source: IEEE Transactions on Nuclear Science; Dec2012 Part 2, Vol. 59 Issue 6, p3201-3204, 4p

Electron transport properties of Zn0.88Mn0.12O/ZnO modulation-doped heterostructures.

Authors: Masuko, K. Ashida, A. Yoshimura, T. et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; May2009, Vol. 27 Issue 3, p1760-1764, 5p, 2 Color Photographs, 2 Diagrams, 1 Chart, 3 Graphs

Fabrication of doped Pb(Zr,Ti)O3 capacitors on Pt substrates with different orientations.

Authors: Tamano, R. Amano, T. Takada, Y. et al.

Source: Electronics Letters (Wiley-Blackwell); Aug2016, Vol. 52 Issue 16, p1399-1401, 3p

Al:ZnO top electrodes deposited with various oxygen pressures for ferroelectric (Pb,La)(Zr,Ti)O3 capacitors.

Authors: Takada, Y. Okamoto, N. Saito, T. et al.

Source: Electronics Letters (Wiley-Blackwell); Feb2016, Vol. 52 Issue 3, p230-232, 3p