Search Results - "Gradwohl, Kevin-P."

A Coupled Approach to Compute the Dislocation Density Development during Czochralski Growth and Its Application to the Growth of High-Purity Germanium (HPGe).

Authors: Miller, Wolfram Sabanskis, Andrejs Gybin, Alexander et al.

Source: Crystals (2073-4352); Oct2023, Vol. 13 Issue 10, p1440, 18p

On the Czochralski growth of SixGe1−x crystals as substrates for strained Ge quantum well heterostructures.

Authors: Subramanian, Aravind N. Richter, Carsten Gybin, Alexander et al.

Source: Journal of Applied Physics; 2/14/2025, Vol. 137 Issue 6, p1-10, 10p

Crystal habit analysis of LiFePO4 microparticles by AFM and first-principles calculations.

Authors: Gradwohl, Kevin-P. Benedek, Peter Popov, Maxim et al.

Source: CrystEngComm. 10/21/2022, Vol. 24 Issue 39, p6891-6901. 11p.

Subjects: Atomic force microscopy, Crystals, Density functional theory, Hydrothermal synthesis, Surface energy

Strain Relaxation of Si/SiGe Heterostructures by a Geometric Monte Carlo Approach.

Authors: Gradwohl, Kevin-P. Lu, Chen-Hsun Liu, Yujia et al.

Source: Physica Status Solidi - Rapid Research Letters. Jun2023, Vol. 17 Issue 6, p1-8. 8p.

Development of Large‐Diameter and Very High Purity Ge Crystal Growth Technology for Devices.

Authors: Sumathi, Rajappan Radhakrishnan Gybin, Alexander Gradwohl, Kevin‐P. et al.

Source: Crystal Research & Technology; May2023, Vol. 58 Issue 5, p1-8, 8p

Electromechanical Behavior of Al/Al2O3 Multilayers on Flexible Substrates: Insights from In Situ Film Stress and Resistance Measurements.

Authors: Putz, Barbara Edwards, Thomas E.J. Huszar, Emese et al.

Source: Advanced Engineering Materials; Feb2023, Vol. 25 Issue 2, p1-15, 15p

Role of critical thickness in SiGe/Si/SiGe heterostructure design for qubits.

Authors: Liu, Yujia Gradwohl, Kevin-P. Lu, Chen-Hsun et al.

Source: Journal of Applied Physics; 8/28/2022, Vol. 132 Issue 8, p1-9, 9p

Iron-rich talc as air-stable platform for magnetic two-dimensional materials.

Authors: Matković, Aleksandar Ludescher, Lukas Peil, Oleg E. et al.

Source: NPJ 2D Materials & Applications; 12/21/2021, Vol. 5 Issue 1, p1-9, 9p

Investigation of the dislocation structure in Czochralski germanium crystals grown in [211] and [110] growth directions.

Authors: Gradwohl, Kevin-P. Roder, Melissa Danilewsky, Andreas N. et al.

Source: CrystEngComm. 6/21/2021, Vol. 23 Issue 23, p4116-4124. 9p.

Subjects: Dislocation structure, Germanium, Crystals, X-ray topography, Screw dislocations, Dislocation density

Dynamical X‐ray diffraction imaging of voids in dislocation‐free high‐purity germanium single crystals.

Authors: Gradwohl, Kevin-P. Danilewsky, Andreas N. Roder, Melissa et al.

Source: Journal of Applied Crystallography. Aug2020, Vol. 53 Issue 4, p880-884. 5p.

Subjects: Single crystals, X-ray imaging, Germanium, X-ray diffraction, X-ray topography, Dislocations in crystals, Voids (Crystallography), Dislocation density

Single crystalline high-purity germanium bars grown by the zone-refining technique.

Authors: Gradwohl, Kevin-P. Gybin, Alexander Guguschev, Christo et al.

Source: Journal of Crystal Growth. Apr2024, Vol. 632, pN.PAG-N.PAG. 1p.

Subjects: Carrier density, Charge carrier mobility, Charge carrier lifetime, Germanium, Single crystals

Quantitative dislocation multiplication law for Ge single crystals based on discrete dislocation dynamics simulations.

Authors: Gradwohl, Kevin-P. Miller, Wolfram Dropka, Natasha et al.

Source: Computational Materials Science. Aug2022, Vol. 211, pN.PAG-N.PAG. 1p.

The impact of the dislocation distribution and dislocation type on the charge carrier lifetime in Czochralski germanium single crystals.

Authors: Gradwohl, Kevin-P. Juda, Uta Radhakrishnan Sumathi, R.

Source: Journal of Crystal Growth. Nov2021, Vol. 573, pN.PAG-N.PAG. 1p.

Subjects: Charge carrier lifetime, Single crystals, Germanium, Charge carriers, Dislocation density

On the Czochralski growth of SixGe1−x crystals as substrates for strained Ge quantum well heterostructures.

Authors: Subramanian, Aravind N. Richter, Carsten Gybin, Alexander et al.

Source: Journal of Applied Physics. 2/14/2025, Vol. 137 Issue 6, p1-10. 10p.

Growth of heavily-doped Germanium single crystals for mid-Infrared applications.

Authors: Sumathi, R. Radhakrishnan Abrosimov, Nikolay Gradwohl, Kevin-P. et al.

Source: Journal of Crystal Growth. Apr2020, Vol. 535, pN.PAG-N.PAG. 1p.

Subjects: Single crystals, Boron, Crystal growth, Germanium, Solid-liquid interfaces, N-type semiconductors, Crystals, Dislocation density

Pit-formation in germanium homoepitaxial layers.

Authors: Oezkent, Maximilian Liu, Yujia Lu, Chen-Hsun et al.

Source: Surface Science. Sep2024, Vol. 747, pN.PAG-N.PAG. 1p.

Bulk-suppressed and surface-sensitive Raman scattering by transferable plasmonic membranes with irregular slot-shaped nanopores.

Authors: Wyss RM Kewes G Marabotti P et al.

Source: Nature communications [Nat Commun] 2024 Jun 19; Vol. 15 (1), pp. 5236. Date of Electronic Publication: 2024 Jun 19.

Publication Type: Journal Article

Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE

Enhanced Nanoscale Ge Concentration Oscillations in Si/SiGe Quantum Well through Controlled Segregation.

Authors: Gradwohl KP Cvitkovich L Lu CH et al.

Source: Nano letters [Nano Lett] 2025 Mar 19; Vol. 25 (11), pp. 4204-4210. Date of Electronic Publication: 2025 Mar 04.

Publication Type: Journal Article

Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101088070 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1530-6992 (Electronic) Linking ISSN: 15306984 NLM ISO Abbreviation: Nano Lett Subsets: MEDLINE; PubMed not MEDLINE