Search Results - "Hartmann J"

NiPt (10 at. %) germanosilicidation of substrates with high Ge content.

Authors: Guillemin, S. Patouillard, J. Tessaire, M. et al.

Source: Journal of Applied Physics; 4/28/2026, Vol. 139 Issue 16, p1-13, 13p

A molecular beam/surface spectroscopy apparatus for the study of reactions on complex model catalysts.

Authors: Libuda, J. Meusel, I. Hartmann, J.

Source: Review of Scientific Instruments; December 2000, Vol. 71 Issue 12, p4395-4408, 14p

Thermal conductivity of thin metallic films measured by photothermal profile analysis.

Authors: Langer, G. Hartmann, J. Reichling, M.

Source: Review of Scientific Instruments; March 1997, Vol. 68, p1510-1513, 4p

Hemodynamic changes during conventional and daylight photodynamic therapy of actinic keratoses – a randomized controlled trial.

Authors: Hartmann, J. Keller, A. Enk, A. et al.

Source: Journal of Dermatological Treatment. Nov2022, Vol. 33 Issue 7, p3022-3027. 6p.

Associations between disturbed sleep and attenuated psychotic experiences in people at clinical high risk for psychosis.

Authors: Formica, M. J. C. Fuller-Tyszkiewicz, M. Reininghaus, U. et al.

Source: Psychological Medicine. Jul2024, Vol. 54 Issue 9, p2254-2263. 10p.

Subjects: Self-evaluation, Risk assessment, Mental health, Prediction models, Research funding, Questionnaires, Multiple regression analysis, Interviewing, Descriptive statistics, Perceptual disorders, Sleep deprivation, Cognition disorders, Research methodology, Psychoses, Comparative studies, Data analysis software, Sleep quality, Sleep disorders, Disease complications

Use techno-economic benchmark to review supply-chain models.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; October 2005, Vol. 84 Issue 10, p63-70, 6p

Ramp up LP models with audits and transparent reporting methods.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; Sep2004, Vol. 83 Issue 9, p91-96, 6p

Case history: Revisit fundamentals for blending rules.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; Mar2004, Vol. 83 Issue 3, p71-75, 5p

Balance hydrogen consumption.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; December 2001, Vol. 80 Issue 12, p45-48, 4p

Determine the optimum crude intake level-a case history.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; Jul2001, Vol. 80 Issue 6, p77-84, 5p

Interpreting LP outputs.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; Feb99, Vol. 78 Issue 3, p64-68, 5p

Decision-making and modeling in petroleum refining.

Authors: Hartmann, J. C. M.

Source: Hydrocarbon Processing; November 1997, Vol. 76, p77-81, 5p

Photonic ge-based platforms for mid-infrared applications.

Authors: Reboud, V. Hartmann, J. M. Serna, S. et al.

Source: Photoniques; 2024, Issue 125, p50-57, 6p

300 Mm sSOI engineering with ultra thin buried oxide.

Authors: Barge, D. Gallard, M. Hartmann, J.-M. et al.

Source: Solid-State Electronics; Feb2026, Vol. 232, pN.PAG-N.PAG, 1p

Study of HCl and Secco Defect Etching for Characterization of Thick sSOI.

Authors: Abbadie, A. Bedell, S. W. Hartmann, J. M.

Source: Journal of the Electrochemical Society; Aug2007, Vol. 154 Issue 8, pH713-H719, 7p

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: I. Film thickness and morphology.

Authors: Hartmann, J. M. Abbadie, A. Guinche, Y.

Source: Semiconductor Science & Technology; April 2007, Vol. 22 Issue 4, p354-361, 8p

Tensile-strained Si layers grown on Si0.6Ge0.4 and Si0.5Ge0.5 virtual substrates: II. Strain and defects.

Authors: Hartmann, J. M. Abbadie, A. Rouchon, D.

Source: Semiconductor Science & Technology; April 2007, Vol. 22 Issue 4, p362-368, 7p

Selective chemical vapour etching of Si1-xGex versus Si with gaseous HCl.

Authors: Bogumilowicz, Y. Hartmann, J. M. Fabri, J. M.

Source: Semiconductor Science & Technology; December 2006, Vol. 21 Issue 12, p1668-1674, 7p

Chemical vapour etching of Si, SiGe and Ge with HCI; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations.

Authors: Bogumilovicz, Y. Hartmann, J. M. Truche, R.

Source: Semiconductor Science & Technology; February 2005, Vol. 20 Issue 2, p127-134, 8p

Growth and characterization of LPCVD Si quantum dots on insulators.

Authors: Baron, T. Mazen, F. Hartmann, J. M.

Source: Solid-State Electronics; Sep2004, Vol. 48 Issue 9, p1503-1509, 7p