Search Results - "Hauser J"

Enhanced cell adhesion to silicone implant material through plasma surface modification.

Authors: Hauser, J. Zietlow, J. Köller, M.

Source: Journal of Materials Science: Materials in Medicine; Dec2009, Vol. 20 Issue 12, p2541-2548, 8p

Receding horizon control of vectored thrust flight experiment.

Authors: Milam, M. B. Franz, R. Hauser, J. E.

Source: IEE Proceedings -- Control Theory & Applications; May 2005, Vol. 152 Issue 3, p340-348, 9p

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539 Data harmonization: the next frontier in physiotherapy.

Authors: Morrison, L. Hauser, J.

Source: Journal of Cystic Fibrosis. Sep2024 Supplement 2, Vol. 23, pS295-S297. 3p.

UAV as a Reliable Wingman: A Flight Demonstration.

Authors: Waydo, S. Hauser, J. Bailey, R.

Source: IEEE Transactions on Control Systems Technology; July 2007, Vol. 15 Issue 4, p680-688, 9p

Modal test of a large spacecraft using a mass-loaded interface.

Authors: Haughton, J. M. Hauser, J. A. Turner, L. M.

Source: Experimental Techniques; November/December 1992, Vol. 16, p15-20, 6p

Apparatus for assessing sulfide generation rates from sewer slimes.

Authors: Hauser, J. Holder, G. A.

Source: Journal of Environmental Engineering; August 1988, Vol. 114, p977-981, 5p

Influence of flow velocity on sulfide production within filled sewers.

Authors: Holder, G. A. Hauser, J.

Source: Journal of Environmental Engineering; April 1987, Vol. 113, p300-310, 11p

Limiting discrimination charges in the disciplinary process.

Authors: Hauser, J. J.

Source: Chemical Engineering Progress; September 1983, Vol. 79, p15-18, 4p

Time dependent dielectric breakdown measurements on RPECVD and thermal oxides.

Authors: Silvestre, C. Hauser, J. R.

Source: Journal of the Electrochemical Society; November 1995, Vol. 142, p3881-3889, 9p

Conductivity of ion implanted and rapid thermal annealed semi-insulating polycrystalline silicon.

Authors: Ozgüz, V. H. Wortman, J. J. Hauser, J. R.

Source: Journal of the Electrochemical Society; March 1988, Vol. 135, p665-671, 7p

Antireflection layers for GaAs solar cells.

Authors: Arora, N. D. Hauser, J. R.

Source: Journal of Applied Physics; Dec1982, Vol. 53, p8839-8846, 8p

Electrical and structural properties of Ag-X diffusion couples (X=Te, Se, S, and I)

Authors: Hauser, J. J.

Source: Journal of Applied Physics; May1982, Vol. 53, p3634-3638, 5p

Theoretical calculations of electron mobility in ternary III-V compounds.

Authors: Harrison, J. W. Hauser, J. R.

Source: Journal of Applied Physics; January 1976, Vol. 47, p292-300, 9p

Ion implanted photodiode detectors in epitaxial (Ga*In1-*)As.

Authors: Ajmera, P. K. Hauser, J. R.

Source: Applied Optics; December 1975, Vol. 14, p2905-2910, 6p

Effects of profile doped elevated source/drain structures on deep-submicron MOSFETs.

Authors: Tian, H. Kim, K. W. Hauser, J. R.

Source: Solid-State Electronics; March 1995, Vol. 38, p573-579, 7p

Negative resistance and peak velocity in the central (000) valley of III-V semiconductors.

Authors: Hauser, J. R.

Source: Solid-State Electronics; May 1979, Vol. 22, p487-493, 7p

Theoretical effects of surface diffused region lifetime models on silicon solar cells.

Authors: Dunbar, P. M. Hauser, J. R.

Source: Solid-State Electronics; August 1977, Vol. 20, p697-701, 5p

Study of efficiency in low resistivity silicon solar cells.

Authors: Dunbar, P. M. Hauser, J. R.

Source: Solid-State Electronics; February 1976, Vol. 19, p95-102, 8p

Space-charge effects in insulators resulting from electron irradiation.

Authors: Monteith, L. K. Hauser, J. R.

Source: Journal of Applied Physics; December 1967, Vol. 38, p5355-5365, 11p