Search Results - "Helm M"

Ultrafast carrier dynamics in nitrogen-implanted GaAs.

Authors: Sinning, S. Dekorsy, T. Helm, M.

Source: IEE Proceedings -- Optoelectronics; Oct2004, Vol. 151 Issue 5, p361-364, 4p

Vascular malformations of the female and male genitalia: type and distribution patterns revealed by magnetic resonance imaging.

Authors: Helm, M. Goldann, C. Hammer, S. et al.

Source: Clinical & Experimental Dermatology. Jan2022, Vol. 47 Issue 1, p43-49. 7p. 2 Color Photographs, 1 Diagram, 2 Charts.

Programmable Activation of Quantum Emitters in High‐Purity Silicon with Focused Carbon Ion Beams.

Authors: Hollenbach, M. Klingner, N. Mazarov, P. et al.

Source: Advanced Quantum Technologies; Jan2025, Vol. 8 Issue 1, p1-7, 7p

Si1−x−yGeySnx alloy formation by Sn ion implantation and flash lamp annealing.

Authors: Steuer, O. Michailow, M. Hübner, R. et al.

Source: Journal of Applied Physics; 8/14/2024, Vol. 136 Issue 6, p1-9, 9p

Structural changes in Ge1−xSnx and Si1−x−yGeySnx thin films on SOI substrates treated by pulse laser annealing.

Authors: Steuer, O. Schwarz, D. Oehme, M. et al.

Source: Journal of Applied Physics; 8/7/2024, Vol. 136 Issue 5, p1-10, 10p

Ultralong‐Term High‐Density Data Storage with Atomic Defects in SiC.

Authors: Hollenbach, M. Kasper, C. Erb, D. et al.

Source: Advanced Functional Materials; 7/3/2024, Vol. 34 Issue 27, p1-8, 8p

Charge transport in n-type As- and Sb-hyperdoped Ge.

Authors: Wang, Mao Shaikh, M. S. Li, Yi et al.

Source: Applied Physics Letters; 4/1/2024, Vol. 124 Issue 14, p1-8, 8p

Annealing effect on ferromagnetic properties, hole concentration and electronic band structure of GaMnAs epitaxial layers.

Authors: Zhu, Jiajun Li, Lin Chen, Lin et al.

Source: Journal of Materials Science: Materials in Electronics; Dec2017, Vol. 28 Issue 23, p17622-17626, 5p

Bloch and localized electrons in semiconductor superlattices.

Authors: Helm, M. Hilber, W. Fromherz, T.

Source: Semiconductor Science & Technology; November 1994, Vol. 9, p1989-1993, 5p

Second-order susceptibilities related to valence-band transitions in asymmetric Si/SiGe quantum wells.

Authors: Kruck, P. Seto, M. Helm, M.

Source: Solid-State Electronics; 1996, Vol. 40 Issue 1-8, p763-766, 4p

Teaching as an exciting career.

Authors: Helm, M. S.

Source: Journal of Engineering Education; November 1957, Vol. 48, p111-114, 4p

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Magnetic fields in watt-hour meters.

Authors: Keener, C. A. Faucett, M. A. Helm, M. S.

Source: Electrical Engineering.; May 1941, Vol. 60, pTrans-205, 5p

Accuracy of watt-hour meters on intermittent loads.

Authors: Faucett, M. A. Keener, C. A. Helm, M. S.

Source: Electrical Engineering.; August 1940, Vol. 59, pTrans460-Trans464, 5p

Microcavity enhanced silicon light emitting pn-diode.

Authors: Potfajova, J. Schmidt, B. Helm, M.

Source: Applied Physics Letters; April 12 2010, Vol. 96 Issue 15, p151113-1-151113-3, 3p

Symptoms, health behavior and understanding of menopause therapy in women with premature menopause.

Authors: Gibson-Helm, M. Teede, H. Vincent, A.

Source: Climacteric. Dec2014, Vol. 17 Issue 6, p666-673. 8p.

Terahertz control of photoluminescence emission in few-layer InSe.

Authors: Venanzi, T. Selig, M. Pashkin, A. et al.

Source: Applied Physics Letters; 2/28/2022, Vol. 120 Issue 9, p1-7, 7p

Schools and Work. Discussion Paper No. 1.

Authors: Western Australia Education Dept., Perth. Helm, M.

Peer Reviewed: N

Page Count: 30

Descriptors: Equal Education, Foreign Countries, Labor Needs, School Responsibility, School Role, Secondary Education, Unemployment, Vocational Education, Youth Employment

Geographic Terms: Australia

Incidence of transient hypoxia during pre-hospital rapid sequence intubation by anaesthesiologists.

Authors: HELM, M. KREMERS, G. LAMPL, L. et al.

Source: Acta Anaesthesiologica Scandinavica. Feb2013, Vol. 57 Issue 2, p199-205. 7p. 4 Charts.