Search Results - "Hesser G"

Analytical methods used for low temperature Cu-Cu wafer bonding process evaluation.

Authors: Rebhan, B. Tollabimazraehno, S. Hesser, G. et al.

Source: Microsystem Technologies; May2015, Vol. 21 Issue 5, p1003-1013, 11p

Nanoscale analysis of the influence of pre-oxidation on oxide formation and wetting behavior of hot-dip galvanized high strength steel.

Authors: Arndt, M. Duchoslav, J. Steinberger, R. et al.

Source: Corrosion Science; Apr2015, Vol. 93, p148-158, 11p

Highly luminescent nanocrystal quantum dots fabricated by lattice-type mismatched epitaxy

Authors: Heiss, W. Kaufmann, E. Böberl, M. et al.

Source: Physica E; Dec2006, Vol. 35 Issue 2, p241-245, 5p

MBE growth conditions for Si island formation on Ge (001) substrates

Authors: Pachinger, D. Lichtenberger, H. Chen, G. et al.

Source: Thin Solid Films; Nov2008, Vol. 517 Issue 1, p62-64, 3p

Mechanisms for room temperature direct wafer bonding.

Authors: Plach, T. Hingerl, K. Tollabimazraehno, S. et al.

Source: Journal of Applied Physics; Mar2013, Vol. 113 Issue 9, p094905-094905-7, 1p, 3 Black and White Photographs, 2 Diagrams, 3 Graphs

Intersubband optoelectronics in the InGaAs/GaAsSb material system.

Authors: Detz, H. Andrews, A. M. Nobile, M. et al.

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; May2010, Vol. 28 Issue 3, pC3G19-C3G23, 1p, 2 Diagrams, 5 Graphs

Ellipsometry and spectroscopy on 1.55 μm emitting Ge islands in Si for photonic applications.

Authors: Lavchiev, V. M. Schade, U. Hesser, G. et al.

Source: Physical Review B: Condensed Matter & Materials Physics. Sep2012, Vol. 86 Issue 12, p125421-1-125421-9. 9p.

Nanoscale analysis of surface oxides on ZnMgAl hot-dip-coated steel sheets.

Authors: Arndt, M. Duchoslav, J. Itani, H. et al.

Source: Analytical & Bioanalytical Chemistry. Aug2012, Vol. 404 Issue 2, p651-661. 11p.

Core-rim structure formation in TiC-Ni based cermets fabricated by a combined thermal explosion/hot-pressing process.

Authors: Lemboub, S. Boudebane, S. Gotor, F.J. et al.

Source: International Journal of Refractory Metals & Hard Materials. Jan2018, Vol. 70, p84-92. 9p.

Nucleation and formation of Au-catalyzed ZnTe nanowires on (0 0 1) GaAs by MBE: From planar to out-of-plane growth.

Authors: Volobuev, V.V. Groiss, H. Halilovic, A. et al.

Source: Journal of Crystal Growth. Nov2017, Vol. 477, p118-122. 5p.

Tailoring of oxide morphology and crystallinity on advanced high-strength steel surfaces prior hot-dip galvanizing.

Authors: Sagl, R. Jarosik, A. Angeli, G. et al.

Source: Acta Materialia. Jun2014, Vol. 72, p192-199. 8p.

Interdiffusion in Heusler film epitaxy on GaAs(001).

Authors: Gusenbauer, C. Ashraf, T. Stangl, J. et al.

Source: Physical Review B: Condensed Matter & Materials Physics. Jan2011, Vol. 83 Issue 3, p35319:1-35319:8. 8p.

PbTe and SnTe quantum dot precipitates in a CdTe matrix fabricated by ion implantation.

Authors: Kaufmann, E. Schwarzl, T. Groiss, H. et al.

Source: Journal of Applied Physics. Aug2009, Vol. 106 Issue 4, p043105-1-043105-5. 5p. 2 Black and White Photographs, 3 Graphs.

Molecular beam epitaxy of Si/Ge nanoislands on stripe-patterned Si (001) substrates with different stripe orientations

Authors: Matei, D. Sanduijav, B. Chen, G. et al.

Source: Journal of Crystal Growth. Mar2009, Vol. 311 Issue 7, p2220-2223. 4p.

InAs/AlGaAs QDs for intersubband devices

Authors: Schramboeck, M. Andrews, A.M. Klang, P. et al.

Source: Superlattices & Microstructures. Oct2008, Vol. 44 Issue 4/5, p411-415. 5p.

Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration

Authors: Brehm, M. Suzuki, T. Zhong, Z. et al.

Source: Microelectronics Journal. Mar2008, Vol. 39 Issue 3/4, p485-488. 4p.

Quantum dots with coherent interfaces between rocksalt-PbTe and zincblende-CdTe.

Authors: Heiss, W. Groiss, H. Kaufmann, E. et al.

Source: Journal of Applied Physics. 4/15/2007, Vol. 101 Issue 8, p081723. 5p. 2 Diagrams, 3 Graphs.

Surfactant-mediated Si quantum dot formation on Ge(001).

Authors: Pachinger, D. Groiss, H. Teuchtmann, M. et al.

Source: Applied Physics Letters. 5/30/2011, Vol. 98 Issue 22, p223104. 3p. 1 Color Photograph, 1 Black and White Photograph, 1 Diagram, 1 Graph.

Para-sexiphenyl-CdSe/ZnS nanocrystal hybrid light emitting diodes.

Authors: Simbrunner, C. Hernandez-Sosa, G. Baumgartner, E. et al.

Source: Applied Physics Letters. 2/16/2009, Vol. 94 Issue 7, pN.PAG. 3p. 1 Diagram, 2 Graphs.

Stranski-Krastanow growth of tensile strained Si islands on Ge (001).

Authors: Pachinger, D. Groiss, H. Lichtenberger, H. et al.

Source: Applied Physics Letters. 12/3/2007, Vol. 91 Issue 23, p233106. 3p. 1 Black and White Photograph, 2 Graphs.