Search Results - "Hung, Wei-Chun"

Effects of a Single Session of Floss Band Intervention on Flexibility of Thigh, Knee Joint Proprioception, Muscle Force Output, and Dynamic Balance in Young Adults.

Authors: Chang, Nai-Jen Hung, Wei-Chun Lee, Chia-Lun et al.

Source: Applied Sciences (2076-3417); Dec2021, Vol. 11 Issue 24, p12052, 13p

Subgingival Microbiome in Rheumatoid Arthritis Patients with Periodontitis.

Authors: Chen, Yi-Jing Hung, Wei-Chun Chou, Yu-Hsiang et al.

Source: International Journal of Molecular Sciences. Sep2022, Vol. 23 Issue 17, p9883. 12p.

Comparative Gut Microbiome Differences between High and Low Aortic Arch Calcification Score in Patients with Chronic Diseases.

Authors: Liu, Yi-Hsueh Peng, Po Hung, Wei-Chun et al.

Source: International Journal of Molecular Sciences. Mar2023, Vol. 24 Issue 6, p5673. 16p.

Analysis of abnormal threshold voltage shift induced by surface donor state in GaN HEMT on SiC substrate.

Authors: Kuo, Ting-Tzu Chen, Ying-Chung Chang, Ting-Chang et al.

Source: Applied Physics Letters; 6/6/2022, Vol. 120 Issue 23, p1-5, 5p

Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide- Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology.

Authors: Hung, Wei-Chun Tu, Yu-Fa Chang, Ting-Chang et al.

Source: IEEE Electron Device Letters; May2022, Vol. 43 Issue 5, p769-772, 4p

Highly-Doped Region Optimization for Reduced Hot-Carrier Effects in Dual-Gate Low Temperature Polysilicon TFTs.

Authors: Chen, Jian-Jie Chen, Po-Hsun Chang, Ting-Chang et al.

Source: IEEE Electron Device Letters; Dec2021, Vol. 42 Issue 12, p1794-1797, 4p

Investigation of degradation behavior under negative bias temperature stress in Si/Si0.8Ge0.2 metal-oxide-semiconductor capacitors.

Authors: Chang, Yen-Cheng Lin, Chien-Yu Chang, Ting-Chang et al.

Source: Journal of Physics D: Applied Physics; 11/25/2021, Vol. 54 Issue 47, p1-6, 6p

Abnormal hump in low temperature in SiGe devices with silicon capping insertion layer.

Authors: Huang, Wei-Chen Chen, Po-Hsun Lin, Chih-Yang et al.

Source: Journal of Physics D: Applied Physics; 10/14/2021, Vol. 54 Issue 41, p1-6, 6p

Comparison of the Hot Carrier Degradation of N- and P-Type Fin Field-Effect Transistors in 14-nm Technology Nodes.

Authors: Ciou, Fong-Min Lin, Jia-Hong Chen, Po-Hsun et al.

Source: IEEE Electron Device Letters; Oct2021, Vol. 42 Issue 10, p1420-1423, 4p

Studies on photochemical rearrangement of non‐oxygenated bicyclo[2.2.2]octenones and mono‐oxygenated bicyclo[2.2.2]octenones from masked o‐benzoquinones: Access to protoilludane and marasmane skeletons.

Authors: Hung, Wei‐Chun Chen, Yung‐Ching Niu, Guang‐Hao et al.

Source: Journal of the Chinese Chemical Society. Mar2020, Vol. 67 Issue 3, p383-398. 16p.

The Natural History of SARS-CoV-2-Incurred Disease: From Infection to Long COVID.

Authors: Liang, Kung-Hao Teng, Yuan-Chi Liao, Yi-Ting et al.

Source: International Journal of Translational Medicine. Mar2024, Vol. 4 Issue 1, p72-86. 15p.

Test-Retest Reliability of Sole Morphology Measurements Using a Novel Single-Image-Based Pin-Array Impression Reconstruction Method.

Authors: Chen, Tsan-Yang Kuo, Chien-Chung Hung, Li-Wei et al.

Source: Applied Sciences (2076-3417); May2021, Vol. 11 Issue 10, p4447, 12p

Effects of Various Polishing Techniques on the Surface Characteristics of the Ti-6Al-4V Alloy and on Bacterial Adhesion.

Authors: Jhong, Yu-Ting Chao, Chih-Yeh Hung, Wei-Chun et al.

Source: Coatings (2079-6412); Nov2020, Vol. 10 Issue 11, p1057, 1p

Analysis of Edge Effect Occurring in Non-Volatile Ferroelectric Transistors.

Authors: Yeh, Chien-Hung Chang, Kai-Chun Lin, Yun-Hsuan et al.

Source: IEEE Electron Device Letters; Mar2021, Vol. 42 Issue 3, p315-318, 4p

Leakage Current in Fast Recovery Diode Suppressed by Low Temperature Supercritical Fluid Treatment Process.

Authors: Hung, Wei-Chun Jin, Fu-Yuan Chang, Ting-Chang et al.

Source: IEEE Electron Device Letters; Oct2020, Vol. 41 Issue 10, p1540-1543, 4p

Abnormal Increment Substrate Current After Hot Carrier Stress in n-FinFET.

Authors: Lin, Yu-Shan Hung, Wei-Chun Chang, Kai-Chun et al.

Source: IEEE Electron Device Letters; Jan2020, Vol. 41 Issue 1, p15-18, 4p

A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs.

Authors: Lin, Yun-Hsuan Lu, Ying-Hsin Chang, Ting-Chang et al.

Source: IEEE Transactions on Electron Devices; Aug2019, Vol. 66 Issue 8, p3286-3289, 4p

Molecular Evolutionary Pathways toward Two Successful Community-Associated but Multidrug-Resistant ST59 Methicillin-Resistant Staphylococcus aureus Lineages in Taiwan: Dynamic Modes of Mobile Genetic Element Salvages.

Authors: Hung, Wei-Chun Wan, Tsai-Wen Kuo, Yu-Chia et al.

Source: PLoS ONE. 9/8/2016, Vol. 11 Issue 9, p1-19. 19p.

Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node.

Authors: Chang, Kai-Chun Liao, Jih-Chien Chang, Ting-Chang et al.

Source: IEEE Electron Device Letters; Apr2019, Vol. 40 Issue 4, p498-501, 4p

Skin Commensal Staphylococci May Act as Reservoir for Fusidic Acid Resistance Genes.

Authors: Hung, Wei-Chun Chen, Hsiao-Jan Lin, Yu-Tzu et al.

Source: PLoS ONE. 11/18/2015, Vol. 10 Issue 11, p1-15. 15p.