Search Results - "Hwang, Inrok"

Dynamics of resistance switching induced by charge carrier fluence.

Authors: Buh, Gyoung-Ho Hwang, Inrok Park, Bae Ho

Source: Journal of Applied Physics; Oct2010, Vol. 108 Issue 4, p074101-1-074101-3, 3p

Resistive switching transition induced by a voltage pulse in a Pt/NiO/Pt structure.

Authors: Hwang, Inrok Lee, Myung-Jae Buh, Gyoung-Ho

Source: Applied Physics Letters; August 2 2010, Vol. 97 Issue 5, p052106-1-052106-3, 3p

Direct investigation on conducting nanofilaments in single-crystalline Ni/NiO core/shell nanodisk arrays.

Authors: Hwang, Inrok Choi, Jinsik Hong, Sahwan

Source: Applied Physics Letters; February 1 2010, Vol. 96 Issue 5, p053112-1-053112-3, 3p

Unipolar resistive switching mechanism speculated from irreversible low resistance state of Cu2O films.

Authors: Hong, Sahwan Long, Deng Xiao Hwang, Inrok

Source: Applied Physics Letters; August 1 2011, Vol. 99 Issue 5, p052105-052105, 1p

Different nonvolatile memory effects in epitaxial Pt/PbZr0 .3Ti0.7O3/LSCO heterostructures.

Authors: Choi, Jinsik Kim, Jin-Soo Hwang, Inrok

Source: Applied Physics Letters; June 28 2010, Vol. 96 Issue 26, p262113-262113, 1p

Time-dependent electroforming in NiO resistive switching devices.

Authors: Buh, Gyoung-Ho Hwang, Inrok Park, Bae Ho

Source: Applied Physics Letters; October 5 2009, Vol. 95 Issue 14, p142101-142101, 1p

Coexistence of bi-stable memory and mono-stable threshold resistance switching phenomena in amorphous NbOx films.

Authors: Bae, Jieun Hwang, Inrok Jeong, Yuhyun et al.

Source: Applied Physics Letters; 2/6/2012, Vol. 100 Issue 6, p062902, 4p, 1 Diagram, 3 Graphs

Time-dependent electroforming in NiO resistive switching devices.

Authors: Gyoung-Ho Buh Hwang, Inrok Park, Bae Ho

Source: Applied Physics Letters. 10/5/2009, Vol. 95 Issue 14, p142101. 3p. 1 Diagram, 3 Graphs.

Switchable Schottky diode characteristics induced by electroforming process in Mn-doped ZnO thin films.

Authors: Nam, Yoonseung Hwang, Inrok Oh, Sungtaek et al.

Source: Applied Physics Letters; 4/22/2013, Vol. 102 Issue 16, p162105-162105-3, 1p, 1 Diagram, 3 Graphs

Lead-free piezoelectric BiFeO3-BaTiO3 thin film with high Curie temperature.

Authors: Lee, Myang Hwan Kim, Da Jeong Park, Jin Su et al.

Source: Current Applied Physics. Oct2016, Vol. 16 Issue 10, p1449-1452. 4p.

Mechanical Control of Electroresistive Switching.

Authors: Kim, Yunseok Kelly, Simon J. Morozovska, Anna et al.

Source: Nano Letters. Sep2013, Vol. 13 Issue 9, p4068-4074. 7p.

Layer-to-island growth of electrodeposited Cu2O films and filamentary switching in single-channeled grain boundaries.

Authors: Kang, Sung-Oong Hong, Sahwan Choi, Jinsik et al.

Source: Journal of Applied Physics. Mar2010, Vol. 107 Issue 5, p053704-053709. 5p. 5 Diagrams, 2 Graphs.

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.

Authors: Lee, Keundong Lee, Sangik Oh, Sungtaek et al.

Source: Scientific Reports. 7/10/2015, p11279. 1p.

Dynamic mechanical control of local vacancies in NiO thin films.

Authors: Seol D Yang SM Jesse S et al.

Source: Nanotechnology [Nanotechnology] 2018 Jul 06; Vol. 29 (27), pp. 275709. Date of Electronic Publication: 2018 Apr 16.

Publication Type: Journal Article

Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: PubMed not MEDLINE

A new simple method for point contact Andreev reflection (PCAR) using a self-aligned atomic filament in transition-metal oxides.

Authors: Hwang I Lee K Jin H et al.

Source: Nanoscale [Nanoscale] 2015 May 14; Vol. 7 (18), pp. 8531-5.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

Journal Info: Publisher: RSC Pub Country of Publication: England NLM ID: 101525249 Publication Model: Print Cited Medium: Internet ISSN: 2040-3372 (Electronic) Linking ISSN: 20403364 NLM ISO Abbreviation: Nanoscale Subsets: PubMed not MEDLINE

Controlled mechnical modification of manganite surface with nanoscale resolution.

Authors: Kelly SJ Kim Y Eliseev E et al.

Source: Nanotechnology [Nanotechnology] 2014 Nov 28; Vol. 25 (47), pp. 475302. Date of Electronic Publication: 2014 Nov 07.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.

Journal Info: Publisher: IOP Pub Country of Publication: England NLM ID: 101241272 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1361-6528 (Electronic) Linking ISSN: 09574484 NLM ISO Abbreviation: Nanotechnology Subsets: PubMed not MEDLINE

Ultra-thin resistive switching oxide layers self-assembled by field-induced oxygen migration (FIOM) technique.

Authors: Lee S Hwang I Oh S et al.

Source: Scientific reports [Sci Rep] 2014 Nov 03; Vol. 4, pp. 6871. Date of Electronic Publication: 2014 Nov 03.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

Journal Info: Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: PubMed not MEDLINE

Large resistive switching in ferroelectric BiFeO₃ nano-island based switchable diodes.

Authors: Hong S Choi T Jeon JH et al.

Source: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2013 Apr 24; Vol. 25 (16), pp. 2339-43. Date of Electronic Publication: 2013 Feb 28.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't; Research Support, U.S. Gov't, Non-P.H.S.

Journal Info: Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: PubMed not MEDLINE

Confining grains of textured Cu2O films to single-crystal nanowires and resultant change in resistive switching characteristics.

Authors: Deng XL Hong S Hwang I et al.

Source: Nanoscale [Nanoscale] 2012 Mar 21; Vol. 4 (6), pp. 2029-33. Date of Electronic Publication: 2012 Feb 15.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

Journal Info: Publisher: RSC Pub Country of Publication: England NLM ID: 101525249 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 2040-3372 (Electronic) Linking ISSN: 20403364 NLM ISO Abbreviation: Nanoscale Subsets: MEDLINE

Nanoscale lithography on monolayer graphene using hydrogenation and oxidation.

Authors: Byun IS Yoon D Choi JS et al.

Source: ACS nano [ACS Nano] 2011 Aug 23; Vol. 5 (8), pp. 6417-24. Date of Electronic Publication: 2011 Jul 26.

Publication Type: Journal Article; Research Support, Non-U.S. Gov't

Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: PubMed not MEDLINE