Search Results - "Indium arsenide"

InAs sidewall tunnel diodes enabled by surface states.

Authors: Hong, Sungjae Muhowski, Aaron J. Patel, Victor J. et al.

Source: APL Electronic Devices. Dec2025, Vol. 1 Issue 4, p1-7. 7p.

Wide-Dynamic-Range Lead-Free SWIR Image Sensors Based on InAs Thin-Film Quantum-Dot Photodiodes †.

Authors: Chu, Myonglae Song, Wenya Kim, Joo Hyoung et al.

Source: Sensors (14248220). Dec2025, Vol. 25 Issue 23, p7345. 12p.

The Effect of Uncontrolled Impurities on Free Carrier Concentration in InAs After Thermal Treatment.

Authors: Nikoghosyan, S. K. Hovhannisyan, A. S.

Source: Armenian Journal of Physics. 2025, Vol. 18 Issue 4, p53-58. 6p.

Statistical Analysis of the Spatial Distribution of InAl Droplet-Etched Nanoholes in In 0.52 Al 0.48 As Layers.

Authors: Auler, Normen Deutsch, Dennis Reuter, Dirk

Source: Crystals (2073-4352); Sep2025, Vol. 15 Issue 9, p770, 12p

Understanding the origin of circularly polarized light emission induced by coupling to two-dimensional chiral arrays using different functional coatings: Dielectric vs plasmonic.

Authors: Mendoza-Carreño, J. Mihi, A. Alonso, M. I.

Source: Journal of Applied Physics; 4/7/2026, Vol. 139 Issue 13, p1-12, 12p

Composition-engineered quantum dashes for high-speed C-band VCSELs.

Authors: Chen, Gaowen Yang, Wenhao Zhang, Xiupu

Source: Journal of Applied Physics; 4/7/2026, Vol. 139 Issue 13, p1-10, 10p

Design and TCAD Simulation of p+–n+ InAs‐Based TFET.

Authors: Elgamal, Muhammad Sabbagh, Mona El Shokry, Fatma et al.

Source: Nano Select; Mar2026, Vol. 7 Issue 3, p1-10, 10p

Development of a Method for Etching the InAs/InAsSbP Photodiode Heterostructures.

Authors: Pivovarova, A. A. Vinskaya, N. D. Kunitsyna, E. V. et al.

Source: Semiconductors. May2024, Vol. 58 Issue 5, p445-450. 6p.

Subjects: Indium arsenide, Heterostructures, Rate setting, Photodiodes, Etching

Dual regulation of band asymmetry via GaSb layers for high-performance InAs/GaSb long-wavelength infrared nBn detectors.

Authors: Chen, Yuhao Chen, Weiqiang Lu, Lidan et al.

Source: Applied Physics Letters; 1/19/2026, Vol. 128 Issue 3, p1-6, 6p

Phonon frequency and energy of electron-phonon interactions at the band gap of InAs, InP, GaP, and GaN semiconductors.

Authors: Ho, Ching-Yen Ho, Ching-Hwa

Source: Discover Materials; 1/1/2026, Vol. 6 Issue 1, p1-12, 12p

High-performance long-wavelength infrared photodetector based on M-structure InAs/GaSb type-II superlattices.

Authors: Xie, Hui Jiang, Dongwei Zhang, Xiangyu et al.

Source: Applied Physics Letters; 12/15/2025, Vol. 127 Issue 24, p1-5, 5p

QUANTIFICATION OF MICROSTRUCTURAL HOMOGENEITY IN INDIUM ARSENIDE EPILAYERS BY X-RAY DIFFRACTION.

Authors: Odrzywolski, Sebastian Kojdecki, Marek Andrzej Złotnik, Sebastian et al.

Source: Metrology & Measurement Systems; 2024, Vol. 31 Issue 2, p231-257, 27p

Influence of photoexcited and thermal electrons and holes on generation of THz radiation in InAs in magnetic field.

Authors: Grishkov, Vyacheslav E. Uryupin, Sergey A.

Source: Applied Physics B: Lasers & Optics. Jul2025, Vol. 131 Issue 7, p1-9. 9p.

Subjects: Thermal electrons, Indium arsenide, Submillimeter waves, Magnetic fields, Holes (Electron deficiencies), Electronic excitation, Cyclotron resonance, Permittivity

Compensation effect in the kinetics of chemical treatment of GaAs, InAs, GaSb, and InSb using bromine-releasing etching compositions based on H2O2–HBr solutions for the development of effective chemical polishing techniques.

Authors: Sheliuk, I. O. Denysiuk, R. O. Malanych, G. P. et al.

Source: Physics & Chemistry of Solid State; 2025, Vol. 26 Issue 4, p760-765, 6p

Optical gain in O-band active regions with multiple dot-in-well layers.

Authors: Jandu, G. M. Smith, A. R. Allford, C. P. et al.

Source: APL Photonics; Oct2025, Vol. 10 Issue 10, p1-7, 7p

Spectroscopic ellipsometry measurement and analysis of the optical constants of InAs/InAsSb and InGaAs/InAsSb superlattices and their bulk constituents.

Authors: Milosavljevic, Marko S. Carrasco, Rigo A. Newell, Alexander T. et al.

Source: Journal of Applied Physics; 9/7/2025, Vol. 138 Issue 9, p1-20, 20p

Enhanced nonreciprocal energy radiator by magneto-optical material InAs-based square hollow Si pillars.

Authors: Lin, Gengyang Wang, Bo Ye, Jing

Source: Journal of Chemical Physics. 8/28/2025, Vol. 163 Issue 8, p1-9. 9p.

Characteristics of carrier localization and their effects on minority carrier lifetime in InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattices.

Authors: Hao, Yu Su, Zhicheng Li, Weijie et al.

Source: Applied Physics Letters; 8/25/2025, Vol. 127 Issue 8, p1-9, 9p

Characteristics of carrier localization and their effects on minority carrier lifetime in InAs/In0.5Ga0.5As0.5Sb0.5 type II superlattices.

Authors: Hao, Yu Su, Zhicheng Li, Weijie et al.

Source: Applied Physics Letters. 8/25/2025, Vol. 127 Issue 8, p1-9. 9p.

Tailoring in‐Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy.

Authors: Mukherjee, Shagorika Sitaram, Sai Rahul Yu, Mingyu et al.

Source: Small Methods; 8/20/2025, Vol. 9 Issue 8, p1-10, 10p