Search Results - "Inokuchi T"

Spin-Based MOSFET and Its Applications.

Authors: Saito, Y. Inokuchi, T. Ishikawa, M.

Source: Journal of the Electrochemical Society; October 2011, Vol. 158 Issue 10, pH1068-H1076, 9p

Hard axis magnetic field dependence on current-induced magnetization switching in MgO-based magnetic tunnel junctions.

Authors: Saito, Y. Inokuchi, T. Sugiyama, H. et al.

Source: European Physical Journal B: Condensed Matter. Oct2007, Vol. 59 Issue 4, p463-469. 7p. 1 Diagram, 1 Chart, 9 Graphs.

Effect of Acarbose on the Increased Plasma Concentration of Uric Acid Induced by Sucrose Ingestion.

Authors: Moriwaki, Y. Inokuchi, T. Ka, T. et al.

Source: Nucleosides, Nucleotides & Nucleic Acids. Jun/Jul2008, Vol. 27 Issue 6/7, p631-633. 3p. 1 Chart.

Real-time observation of fast and highly reliable magnetization switching in Voltage-Control Spintronics Memory (VoCSM).

Authors: Inokuchi, T. Yoda, H. Koi, K. et al.

Source: Applied Physics Letters; 5/13/2019, Vol. 114 Issue 19, pN.PAG-N.PAG, 4p, 1 Color Photograph, 3 Diagrams, 1 Graph

This result is not displayed to guests.
Login for full access.

Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height.

Authors: Inokuchi, T. Yoda, H. Kato, Y. et al.

Source: Applied Physics Letters; 6/19/2017, Vol. 110 Issue 25, p1-4, 4p, 1 Diagram, 4 Graphs

Spin accumulation and transport signals in CoFe/MgO/Si devices with confined structure of n⁺-Si layer.

Authors: Saito, Y. Inokuchi, T. Ishikawa, M. et al.

Source: AIP Advances. 2017, Vol. 7 Issue 5, p1-6. 6p.

Transport measurement of two-dimensional electron system under ultra-high magnetic fields

Authors: Inokuchi, T. Osada, T. Ikeda, S. et al.

Source: Physica E. Apr2004, Vol. 22 Issue 1-3, p381. 4p.

Subjects: Quantum Hall effect, Quantum theory, Galvanomagnetic effects, Magnetic fields

Correlation between amplitude of spin accumulation signals investigated by Hanle effect measurement and effective junction barrier height in CoFe/MgO/n+-Si junctions.

Authors: Saito, Y. Ishikawa, M. Sugiyama, H. et al.

Source: Journal of Applied Physics; 2015, Vol. 117 Issue 17, p17C707-1-17C707-4, 4p, 1 Chart, 3 Graphs

Effects of interface electric field on the magnetoresistance in spin devices.

Authors: Tanamoto, T. Ishikawa, M. Inokuchi, T. et al.

Source: Journal of Applied Physics; 2014, Vol. 115 Issue 16, p163907-1-163907-7, 7p, 1 Diagram, 4 Graphs

Maximum magnitude in bias-dependent spin accumulation signals of CoFe/MgO/Si on insulator devices.

Authors: Ishikawa, M. Sugiyama, H. Inokuchi, T. et al.

Source: Journal of Applied Physics; Dec2013, Vol. 114 Issue 24, p243904, 6p, 1 Diagram, 1 Chart, 3 Graphs

Effect of the interface resistance of CoFe/MgO contacts on spin accumulation in silicon.

Authors: Ishikawa, M. Sugiyama, H. Inokuchi, T. et al.

Source: Applied Physics Letters; 6/18/2012, Vol. 100 Issue 25, p252404, 4p, 1 Diagram, 2 Graphs

Current-induced magnetization switching under magnetic field applied along the hard axis in MgO-based magnetic tunnel junctions.

Authors: Inokuchi, T. Sugiyama, H. Saito, Y.

Source: Applied Physics Letters; September 4 2006, Vol. 89 Issue 10, p102502-102502, 1p

Transport measurement for low-dimensional conductors under ultra-high magnetic fields beyond 100 T

Authors: Saito, M. Inokuchi, T. Ohmichi, E. et al.

Source: Synthetic Metals. Mar2003, Vol. 133/134, p133. 3p.

Subjects: Magnetoresistance, Magnetic fields

A novel magnetic tunnel junction structure using the edge of a magnetic film

Authors: Sugiyama, H. Inokuchi, T. Saito, Y.

Source: Journal of Magnetism & Magnetic Materials. Mar2007 Part 3, Vol. 310 Issue 2p3, p2003-2005. 3p.

Subjects: Magnetic films, Metallic films, Photosynthetic oxygen evolution, Magnetic fields

Local magnetoresistance through Si and its bias voltage dependence in ferromagnet/MgO/silicon-on-insulator lateral spin valves.

Authors: Saito, Y. Tanamoto, T. Ishikawa, M. et al.

Source: Journal of Applied Physics; 2014, Vol. 115 Issue 17, p17C514-1-17C514-3, 3p

Interlayer exchange coupling dependence of thermal stability parameters in synthetic antiferromagnetic free layers.

Authors: Saito, Y. Sugiyama, H. Inokuchi, T. et al.

Source: Journal of Applied Physics; 4/15/2006, Vol. 99 Issue 8, p08K702, 3p, 4 Graphs

Protective effect of the multitarget compound DPH-4 on human SSAO/VAP-1-expressing hCMEC/D3 cells under oxygen-glucose deprivation conditions: an in vitro experimental model of cerebral ischaemia.

Authors: Sun, P Esteban, G Inokuchi, T et al.

Source: British Journal of Pharmacology. Nov2015, Vol. 172 Issue 22, p5390-5402. 13p. 1 Illustration, 1 Chart, 7 Graphs.

Large spin-accumulation signal in Si for epitaxial CoFe/highly (100)-textured MgO/Si devices.

Authors: Sugiyama, H. Ishikawa, M. Inokuchi, T. et al.

Source: Solid State Communications. Jul2014, Vol. 190, p49-52. 4p.

Subjects: Cobalt compounds, Silicon, Signals & signaling, Epitaxy, Crystal texture, Metals, Magnesium oxide

Effect of combined photodynamic and chemotherapeutic treatment on lymphoma cells in vitro

Authors: Nonaka, M. Ikeda, H. Inokuchi, T.

Source: Cancer Letters. Oct2002, Vol. 184 Issue 2, p171-178. 8p.