Search Results - "Knap, W."

Effect of current on terahertz plasmons in AlGaN/GaN heterostructures.

Authors: Dub, M. Sai, P. Ivonyak, Y. et al.

Source: Applied Physics Letters; 9/8/2025, Vol. 127 Issue 10, p1-5, 5p

A far-infrared spectrometer based on cyclotron resonance emission sources.

Authors: Knap, W. Dur, D. Raymond, A.

Source: Review of Scientific Instruments; June 1992, Vol. 63, p3293-3297, 5p

Hybridization of Terahertz Phonons and Magnons in Disparate and Spatially‐Separated Material Specimens.

Authors: Białek, M. Todorov, Y. Stelmaszczyk, K. et al.

Source: Advanced Functional Materials; 2/26/2025, Vol. 35 Issue 9, p1-8, 8p

Pressure tuning of HgCdTe epitaxial layers—the role of the highly disordered buffer layer.

Authors: Yavorskiy, D Ivonyak, Y But, D et al.

Source: Journal of Physics D: Applied Physics; 1/13/2025, Vol. 58 Issue 2, p1-8, 8p

Grating-Gate AlGaN/GaN Plasmonic Crystals for Terahertz Waves Manipulation.

Authors: Dub, M. Sai, P. Krajewska, A. et al.

Source: International Journal of High Speed Electronics & Systems; Dec2024, Vol. 33 Issue 4, p1-13, 13p

Control of the unscreened modes in AlGaN/GaN terahertz plasmonic crystals.

Authors: Dub, M. Sai, P. Ivonyak, Y. et al.

Source: Journal of Applied Physics; 5/21/2024, Vol. 135 Issue 19, p1-9, 9p

THz quantum well photodetector based on LO-phonon scattering-assisted extraction.

Authors: Pérez-Urquizo, J. Gacemi, D. Zhang, Z. Z. et al.

Source: Applied Physics Letters; 2/5/2024, Vol. 124 Issue 6, p1-6, 6p

THz detectors based on Si-CMOS technology field effect transistors – advantages, limitations and perspectives for THz imaging and spectroscopy.

Authors: Marczewski, J. Coquillat, D. Knap, W. et al.

Source: Opto-Electronics Review; Dec2018, Vol. 26 Issue 4, p261-269, 9p

Real-time solar irradiance forecasting for grid integration using all-sky imagery and multi-stage AI with Kalman filter optimization.

Authors: Barhmi, K. Golroodbari, S. Mirbagheri Knap, W. et al.

Source: Renewable Energy: An International Journal. Mar2026, Vol. 259, pN.PAG-N.PAG. 1p.

Subject Terms: *Atmospheric sciences, *Smart power grids, *Solar radiation, Forecasting, Kalman filtering, Real-time computing

Electron mobility in quasi-ballistic Si MOSFETs.

Authors: Łusakowski, J. Knap, W. Meziani, Y.

Source: Solid-State Electronics; April 2006, Vol. 50 Issue 4, p632-636, 5p

Magnetoresistance characterization of nanometer Si metal-oxide-semiconductor transistors.

Authors: Meziani, Y. M. Łusakowski, J. Knap, W.

Source: Journal of Applied Physics; 11/15/2004, Vol. 96 Issue 10, p5761-5765, 5p

Nonresonant detection of terahertz radiation in field effect transistors.

Authors: Knap, W. Kachorovskii, V. Deng, Y.

Source: Journal of Applied Physics; June 1 2002, Vol. 91 Issue 11, p9346-9353, 8p

High magnetic field studies of two-dimensional electron gas in a GaN/GaAlN heterostucture: mechanisms of parallel conduction.

Authors: Contreras, S. Knap, W. Frayssinet, E.

Source: Journal of Applied Physics; January 15 2001, Vol. 89 Issue 2, p1251-1255, 5p

Room-temperature GaAs/AlGaAs multiple-quantum-well optical modulators for the 3-5 μm atmospheric window.

Authors: Alause, H. Knap, W. Robert, J. L.

Source: Semiconductor Science & Technology; July 2000, Vol. 15 Issue 7, p724-727, 4p

Far infrared spectroscopy with high resolution cyclotron resonance filters.

Authors: Skierbiszewski, C. Knap, W. Dur, D.

Source: Journal of Applied Physics; July 1 1998, Vol. 84 Issue 1, p433-438, 6p

Improved performance of magnetically tunable GaAs and InP far-infrared detectors.

Authors: Knap, W. Lusakowski, J. Karpierz, K.

Source: Journal of Applied Physics; July 15 1992, Vol. 72, p680-683, 4p

Pressure dependence of the cyclotron mass in n-GaAs-GaAlAs heterojunctions by FIR emission and transport experiments.

Authors: Chaubet, C. Raymond, A. Knap, W.

Source: Semiconductor Science & Technology; March 1991, Vol. 6, p160-164, 5p

Low-frequency noise in ZrS3 van der Waals semiconductor nanoribbons.

Authors: Rehman, A. Cywinski, G. Knap, W. et al.

Source: Applied Physics Letters; 2/27/2023, Vol. 122 Issue 9, p1-5, 5p

Temperature dependence of current response to sub-terahertz radiation of AlGaN/GaN and graphene transistors.

Authors: Rehman, A. Delgado-Notario, J. A. Sai, P. et al.

Source: Applied Physics Letters; 11/21/2022, Vol. 121 Issue 21, p1-6, 6p

AlGaN/GaN HEMT's photoresponse to high intensity THz radiation.

Authors: Dyakonova, N. But, D.B. Coquillat, D. et al.

Source: Opto-Electronics Review; Sep2015, Vol. 23 Issue 3, p195-199, 5p