Search Results - "Luo B"

Effects of Particle Size and Concentration on Erosion Wear and Aerodynamic Performance of a Centrifugal Fan.

Authors: Luo, B. Xu, J. Wang, Z. et al.

Source: Journal of Applied Fluid Mechanics; Jul2026, Vol. 19 Issue 7, p1896-1911, 16p

τ-Vmin addressing mode and an improved equivalent circuit model for ferroelectric liquid crystal displays.

Authors: Wang, M. Y. Pan, W. Luo, B.

Source: IET Optoelectronics; February 2007, Vol. 1 Issue 1, p16-22, 7p

Static and dynamic characteristics of VCSELs with polarisation-selective optical feedback.

Authors: Li, X. F. Pan, W. Luo, B.

Source: IEE Proceedings -- Optoelectronics; April 2006, Vol. 153 Issue 2, p67-74, 8p

High-Energy Proton Irradiation Effects on AlGaN/GaN High-Electron Mobility Transistors.

Authors: Luo, B. Johnson, J. W. Ren, F.

Source: Journal of Electronic Materials; May 2002, Vol. 31 Issue 5, p437-441, 5p

Microstructure and internal friction of spray deposited Al-3.3Fe-10.7Si alloy.

Authors: Luo, B. H. Xu, F. J. Xie, Y. Q.

Source: Journal of Materials Science; January 1 2000, Vol. 35 Issue 1, p109-113, 5p

Friction and Wear Behavior of Paired Pairs of Ceramics and Metal in High-Pressure Pump of Seawater Desalination.

Authors: Luo, B. W. Wang, Z. W. Wu, X. B. et al.

Source: Strength of Materials. Sep2021, Vol. 53 Issue 5, p797-803. 7p.

Effects of shear strain on shock response in single crystal iron.

Authors: Li, B. Liu, M. T. Luo, B. Q. et al.

Source: Journal of Applied Physics; 4/14/2024, Vol. 135 Issue 14, p1-12, 12p

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REFRACTOMETRIC SENSOR IN POLYMER OPTICAL FIBERS.

Authors: Hu, X. Luo, B. Caucheteur, C. et al.

Source: POF World Proceedings; 2018, p75-79, 5p

Identification of Listeria Species Using a Low-Cost Surface-Enhanced Raman Scattering System With Wavelet-Based Signal Processing.

Authors: Green, Geoffrey C. Chan, Adrian D. C. Luo, B. Steven

Source: IEEE Transactions on Instrumentation & Measurement; October 2009, Vol. 58 Issue 10, p3713-3722, 10p

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AlGaN/GaN Ka-Band 5-W MMIC Amplifier.

Authors: Darwish, Ali Mohamed Boutros, K. Luo, B.

Source: IEEE Transactions on Microwave Theory & Techniques; December 2006 pt2, Vol. 54 Issue 12, p4456-4463, 8p

Small signal measurement of Sc2O3 AlGaN/GaN MOSHEMTs.

Authors: Luo, B. Mehandru, R. Kang, B. S.

Source: Solid-State Electronics; Feb2004, Vol. 48 Issue 2, p355-358, 4p

GaN/AlGaN HEMTs grown by hydride vapor phase epitaxy on AlN/SiC substrates.

Authors: LaRoche, J. R. Luo, B. Ren, F.

Source: Solid-State Electronics; January 2004, Vol. 48 Issue 1, p193-196, 4p

Advantages and limitations of MgO as a dielectric for GaN.

Authors: Gila, B. P. Kim, J. Luo, B.

Source: Solid-State Electronics; December 2003, Vol. 47 Issue 12, p2139-2142, 4p

Improved dc and power performance of AlGaN/GaN high electron mobility transistors with Sc2O3 gate dielectric or surface passivation.

Authors: Luo, B. Mehandru, R. Kim, Jihyun

Source: Solid-State Electronics; October 2003, Vol. 47 Issue 10, p1781-1786, 6p

Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers.

Authors: Nigam, S. Kim, Jihyun Luo, B.

Source: Solid-State Electronics; September 2003, Vol. 47 Issue 9, p1461-1464, 4p

Proton irradiation of MgO- or Sc2O3 passivated AlGaN/GaN high electron mobility transistors.

Authors: Luo, B. Ren, F. Allums, K. K.

Source: Solid-State Electronics; June 2003, Vol. 47 Issue 6, p1015-1020, 6p

Thermodynamic Dissociation Constant of the Bisulfate Ion from Raman and Ion Interaction Modeling Studies of Aqueous Sulfuric Acid at Low Temperatures.

Authors: Knopf, D. A. Luo, B. P. Krieger, U. K.

Source: Journal of Physical Chemistry A; May 29 2003, Vol. 107 Issue 21, p4322-4332, 11p

Simulation and Experimental Characteristics of 4H-SiC Schottky Power Rectifiers.

Authors: Nigam, S. Kim, Jihyun Luo, B.

Source: Journal of the Electrochemical Society; January 2003, Vol. 150 Issue 1, pG1-G5, 5p