Search Results - "Mehonic A"

APL Machine Learning reviewer acknowledgment for 2024.

Authors: Mehonic, Adnan¹ (AUTHOR) adnan.mehonic.09@ucl.ac.uk

Source: APL Machine Learning. Mar2025, Vol. 3 Issue 1, p1-3. 3p.

Ultra‐Fast Non‐Volatile Resistive Switching Devices with Over 512 Distinct and Stable Levels for Memory and Neuromorphic Computing.

Authors: Xiao, Ming Hellenbrand, Markus Strkalj, Nives et al.

Source: Advanced Functional Materials; 7/17/2025, Vol. 35 Issue 29, p1-15, 15p

Editorial: The intersection of machine learning and physical sciences: Insights from the 2024 Nobel Prizes.

Authors: Milano, Gianluca Mehonic, Adnan

Source: APL Machine Learning. Mar2025, Vol. 3 Issue 1, p1-2. 2p.

Brains and bytes: Trends in neuromorphic technology.

Authors: Mehonic, Adnan Eshraghian, Jason

Source: APL Machine Learning. Jun2023, Vol. 1 Issue 2, p1-3. 3p.

Editorial: Welcome to APL Machine Learning.

Authors: Mehonic, Adnan¹ adnan.mehonic.09@ucl.ac.uk

Source: APL Machine Learning. Mar2023, Vol. 1 Issue 1, p1-2. 2p.

Inkjet‐Printed Ag/a‐TiO2/Ag Neuromorphic Nanodevice Based on Functionalized Ink.

Authors: Salonikidou, Barbara Mehonic, Adnan Takeda, Yasunori et al.

Source: Advanced Engineering Materials; Nov2022, Vol. 24 Issue 11, p1-11, 11p

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware.

Authors: Joksas, Dovydas AlMutairi, AbdulAziz Lee, Oscar et al.

Source: Advanced Intelligent Systems (2640-4567); Aug2022, Vol. 4 Issue 8, p1-18, 18p

Nonideality‐Aware Training for Accurate and Robust Low‐Power Memristive Neural Networks.

Authors: Joksas, Dovydas Wang, Erwei Barmpatsalos, Nikolaos et al.

Source: Advanced Science; 6/13/2022, Vol. 9 Issue 17, p1-16, 16p

Quantum Conductance in Silicon Oxide Resistive Memory Devices.

Authors: Mehonic, A. Vrajitoarea, A. Cueff, S. et al.

Source: Scientific Reports. 9/20/2013, p1-8. 8p.

Live-cell delamination counterbalances epithelial growth to limit tissue overcrowding.

Authors: Marinari, Eliana Mehonic, Aida Curran, Scott et al.

Source: Nature. 4/26/2012, Vol. 484 Issue 7395, p542-545. 4p. 3 Graphs.

Memristors—From In‐Memory Computing, Deep Learning Acceleration, and Spiking Neural Networks to the Future of Neuromorphic and Bio‐Inspired Computing.

Authors: Mehonic, Adnan Sebastian, Abu Rajendran, Bipin et al.

Source: Advanced Intelligent Systems (2640-4567); Nov2020, Vol. 2 Issue 11, p1-20, 20p

Simulation of Cycle-to-Cycle Instabilities in SiO $_{{x}}$ -Based ReRAM Devices Using a Self-Correlated Process With Long-Term Variation.

Authors: Miranda, E. Mehonic, A. Ng, W. H. et al.

Source: IEEE Electron Device Letters. Jan2019, Vol. 40 Issue 1, p28-31. 4p.

Subjects: Silica, Stochastic processes, Quantum point contacts

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing.

Authors: Rahimi Azghadi, Mostafa Chen, Ying-Chen Eshraghian, Jason K. et al.

Source: Advanced Intelligent Systems (2640-4567); May2020, Vol. 2 Issue 5, p1-24, 24p

Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices.

Authors: Mehonic, A. Munde, M.S. Ng, W.H. et al.

Source: Microelectronic Engineering. Jun2017, Vol. 178, p98-103. 6p.

Subjects: Intrinsic semiconductors, Amorphous silicon, Random access memory, Electric potential, Switching circuits

Light-activated resistance switching in SiOx RRAM devices.

Authors: Mehonic, A. Gerard, T. Kenyon, A. J.

Source: Applied Physics Letters; 12/4/2017, Vol. 111 Issue 23, p1-5, 5p, 1 Diagram, 1 Chart, 2 Graphs

Light-activated resistance switching in SiOx RRAM devices.

Authors: Mehonic, A. Gerard, T. Kenyon, A. J.

Source: Applied Physics Letters. 12/4/2017, Vol. 111 Issue 23, p1-5. 5p. 1 Diagram, 1 Chart, 2 Graphs.

Hard way or hardware? Taking the heat out of AI.

Authors: Jayakrishnan, Ampattu R. Hellenbrand, Markus Dixon, Sebastian et al.

Source: APL Machine Learning. Sep2025, Vol. 3 Issue 3, p1-6. 6p.

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory.

Authors: Mehonic, Adnan Buckwell, Mark Montesi, Luca et al.

Source: Journal of Applied Physics; 2015, Vol. 117 Issue 12, p124505-1-124505-8, 8p, 1 Diagram, 5 Graphs

Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory.

Authors: Mehonic, Adnan Buckwell, Mark Montesi, Luca et al.

Source: Journal of Applied Physics. 2015, Vol. 117 Issue 12, p124505-1-124505-8. 8p. 1 Diagram, 5 Graphs.

Multi-channel conduction in redox-based resistive switch modelled using quantum point contact theory.

Authors: Miranda, E. Mehonic, A. Suñé, J. et al.

Source: Applied Physics Letters; 11/25/2013, Vol. 103 Issue 22, p222904, 5p, 1 Diagram, 3 Graphs