Search Results - "Modulation-doped field-effect transistors"

Exploring the Effects of Barrier Thickness and Channel Length on Performance of AlGaN/GaN HEMT Sensors Using Off-the-Shelf AlGaN/GaN Wafers.

Authors: Amen, Mohamed Taha Tran, Duy Phu Feroze, Asad et al.

Source: Applied Sciences (2076-3417); Dec2025, Vol. 15 Issue 23, p12751, 13p

Recent Advancements in N-polar GaN HEMT Technology.

Authors: Akso, Emre Khan, Kamruzzaman Collins, Henry et al.

Source: Crystals (2073-4352); Sep2025, Vol. 15 Issue 9, p830, 30p

Forward gate current modeling of AlGaN/AlN/GaN HEMTs based on Poisson–Schrödinger and direct tunneling equations.

Authors: Charlet, I. Morisot, F. Gobil, Y. et al.

Source: APL Electronic Devices. Sep2025, Vol. 1 Issue 3, p1-9. 9p.

The impact of pulse width modulation on heat accumulation in AlGaN channel HEMTs.

Authors: Myren, D. Jamil, M. S. Klein, B. A. et al.

Source: APL Electronic Devices. Sep2025, Vol. 1 Issue 3, p1-7. 7p.

Research on High-Threshold-Voltage InAlN/GaN HEMTs with p-GaN Caps and Trench Gates with InGaN Buried Layers.

Authors: Chen, Yi-Fei Cai, Li-E Niu, Kai et al.

Source: Journal of Electronic Materials; Aug2025, Vol. 54 Issue 8, p6847-6857, 11p

Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers.

Authors: Wang, Peiran Deng, Chenkai Tang, Chuying et al.

Source: Nanomaterials (2079-4991). Apr2025, Vol. 15 Issue 8, p574. 11p.

Subjects: Modulation-doped field-effect transistors, Electron mobility, Gallium nitride, Computer simulation, Trenches

Numerical Analysis of Single Event Transient Effects in Enhancement-Mode p-GaN/AlGaN/GaN High Electron Mobility Transistors.

Authors: Singha, Showmik Hossain, Md Maruf Islam, Syed Kamrul

Source: International Journal of High Speed Electronics & Systems. Mar2026, Vol. 35 Issue 1, p1-15. 15p.

Modeling and Optimization of Linearity in AlGaN/GaN Tri-Gate Fin-HEMTs Using Fin Configurations and Modulated Barrier Doping for Higher fT and fmax Using Small-Signal Analysis for RF Power Electronics Applications.

Authors: Lakhmikanta Mishra Ranjan, Kumud Jena, Manasa Ranjan

Source: Russian Microelectronics. Feb2026, Vol. 55 Issue 1, p128-142. 15p.

Subjects: Modulation-doped field-effect transistors, Frequency-domain analysis, Frequencies of oscillating systems, Mathematical optimization, Doping agents (Chemistry), Microwave circuits

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection.

Authors: Ge, Long Bai, Haineng Teng, Yidi et al.

Source: Crystals (2073-4352); Jun2025, Vol. 15 Issue 6, p578, 9p

A Comprehensive Investigation on Temperature‐Dependent Small‐Signal Characterization and Modeling of GaN HEMT on Si Substrate.

Authors: Jarndal, Anwar¹ (AUTHOR) ajarndal@sharjah.ac.ae

Source: Advanced Theory & Simulations. Jun2025, Vol. 8 Issue 6, p1-11. 11p.

Dual-Channel SiC-AlGaN/GaN HEMT with a Drain-Connected Field Plate for Improved Breakdown Voltage and Analog/RF Performance.

Authors: Singh, Anshuman Bisht, Sagar Kumar, Manish et al.

Source: IETE Journal of Research; May2025, Vol. 71 Issue 5, p1735-1743, 9p

Simulation and modeling of gallium nitride high-electron mobility transistors for non-alloyed ohmic contacts.

Authors: Tung Kok Siong Packeer Mohamed, Mohamed Fauzi Abd Rahman, Siti Fatimah et al.

Source: International Journal of Nanoelectronics & Materials. Apr2025, Vol. 18 Issue 2, p222-229. 8p.

High sub-bandgap response and fast switching enabled by thermal quenching in carbon-doped semi-insulating GaN.

Authors: Dong, Jiahao Momo, Auditee Majumder Fehr, Austin et al.

Source: Applied Physics Letters; 6/15/2026, Vol. 128 Issue 24, p1-7, 7p

Displacement damage induced disorder and thermal transport degradation in AlGaN alloys: A molecular dynamics study.

Authors: Liang, Xi Zhang, Xiaoning Lv, Mingxin et al.

Source: Journal of Applied Physics; 6/14/2026, Vol. 139 Issue 22, p1-17, 17p

Effect of gas exposure on GaN surface quantum wells.

Authors: Sekely, B. J. Kuhs, C. T. Xue, H. et al.

Source: Applied Physics Letters; 6/8/2026, Vol. 128 Issue 23, p1-6, 6p

Lattice-matched nitride-oxide HEMTs with superior electronic and thermal performance.

Authors: Anwer, Modassir Verma, Amit

Source: Journal of Applied Physics; 5/21/2026, Vol. 139 Issue 19, p1-10, 10p

Review on ultrathin-barrier AlGaN(<6 nm)/GaN enhancement-mode technology: concept, device fabrication, and integration prospects.

Authors: Huang, Sen Zheng, Yang Zhang, Kaiwei et al.

Source: Journal of Physics D: Applied Physics; 2026, Vol. 59 Issue 18, p1-21, 21p

Recent Innovations in GaN HEMT Fabrication for Enhanced High-Frequency Performance: A Review.

Authors: Muktadir, Md. Sifatul Ahmad, Md. Akram Mech, Bhubon Chandra

Source: Journal of Electronic Materials; May2026, Vol. 55 Issue 5, p3987-4004, 18p

An enzymatic uric acid biosensor based on depletion and enhancement mode gallium nitride high electron mobility transistor.

Authors: Yadav, Gunjan Jindal, Kajal Tomar, Monika

Source: Journal of Applied Electrochemistry; May2026, Vol. 56 Issue 5, p1-17, 17p

Gate-length scaling of AlGaN/GaN HEMTs for cryogenic low-noise operation.

Authors: Mebarki, Mohamed Aniss Ragnar, Ferrand Drake Del Castillo Joint, François et al.

Source: Applied Physics Letters; 4/27/2026, Vol. 128 Issue 17, p1-7, 7p