Search Results - "Nojima S"

This result is not displayed to guests.
Login for full access.

This result is not displayed to guests.
Login for full access.

Structure-induced metamorphoses of eigen modes in photonic atoll resonators.

Authors: Nojima, S. Nakahara, S.

Source: Journal of Applied Physics; May 1 2011, Vol. 109 Issue 9, p093118-1-093118-7, 7p

Optical-gain enhancement in two-dimensional active photonic crystals.

Authors: Nojima, S.

Source: Journal of Applied Physics; July 15 2001, Vol. 90 Issue 2, p545-551, 7p

Effects of deep levels on the optoelectronic properties of InGaAs/InAlAs multiquantum-well structures.

Authors: Nojima, S. Nakashima, K. Kawamura, Y.

Source: Journal of Applied Physics; March 15 1988, Vol. 63, p1955-1960, 6p

Refractive index of InGaAs/InAlAs multiquantum-well layers grown by molecular-beam epitaxy.

Authors: Nojima, S. Asahi, H.

Source: Journal of Applied Physics; January 15 1988, Vol. 63, p479-483, 5p

Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs. Distribution among samples.

Authors: Nojima, S. Asahi, H. Ikoma, T.

Source: Journal of Applied Physics; February 1 1987, Vol. 61, p1073-1078, 6p

Deep electron trapping center in Si-doped InGaAlP grown by molecular-beam epitaxy.

Authors: Nojima, S. Tanaka, H. Asahi, H.

Source: Journal of Applied Physics; May 15 1986, Vol. 59, p3489-3494, 6p

Slow-relaxation phenomena in photoconductivity for semi-insulating GaAs.

Authors: Nojima, S.

Source: Journal of Applied Physics; November 1 1985, Vol. 58, p3485-3493, 9p

Diffusion coefficient for the ~ 1.35 eV emission center in annealed GaAs.

Authors: Nojima, S.

Source: Journal of Applied Physics; November 1982, Vol. 53, p7602-7605, 4p

Leaser annealing effects in ion-implanted GaAs.

Authors: Nojima, S.

Source: Journal of Applied Physics; July 1982, Vol. 53, p5028-5036, 9p

This result is not displayed to guests.
Login for full access.

SNG by the MRG process.

Authors: Ward, D. J. Nojima, S.

Source: Gas; May 1973, Vol. 49, p67-70, 4p

Determination of optical modes in two-dimensional finite-size photonic crystals by photonic resonance scattering.

Authors: Nojima, S.

Source: Applied Physics Letters; September 24 2001, Vol. 79 Issue 13, p1959-1961, 3p

Electric field effects in excitonic absorption for high-quality InGaAs/InAlAs multiple-quantum-well structures.

Authors: Nojima, S. Kawamura, Y. Wakita, K.

Source: Journal of Applied Physics; September 1 1988, Vol. 64, p2795-2797, 3p

A new slow-relaxation phenomenon in semi-insulating GaAs.

Authors: Nojima, S.

Source: Journal of Applied Physics; January 15 1985, Vol. 57, p620-622, 3p

Defects in GaAs induced by laser annealing.

Authors: Nojima, S.

Source: Journal of Applied Physics; December 1981, Vol. 52, p7445-7447, 3p

Exon 3 of tyrosine hydroxylase gene: lack of association with Japanese schizophrenic patients.

Authors: Ota, M. Nakashima, A. Ikemoto, K. et al.

Source: Molecular Psychiatry. 2001, Vol. 6 Issue 3, p315. 5p.

Subjects: Tryptophan, Schizophrenia, Exons (Genetics)

Geographic Terms: Japan

This result is not displayed to guests.
Login for full access.

Antibacterial properties of compounds containing the tricarbonylmethane group.

Authors: Ukita, T. Nojima, S. Matsumoto, M.

Source: Journal of the American Chemical Society; November 1950, Vol. 72, p5143-5144, 2p