Search Results - "Onuma T"

Oxidation of HIPed TiC Ceramics in Dry O2, Wet O2, and H2O Atmospheres.

Authors: Shimada, S. Onuma, T. Kiyono, H.

Source: Journal of the American Ceramic Society; April 2006, Vol. 89 Issue 4, p1218-1225, 8p

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The ideal strategy for cervical cancer screening in Japan: Result from the Fukui Cervical Cancer Screening Study.

Authors: Kurokawa, T. Onuma, T. Shinagawa, A. et al.

Source: Cytopathology. Aug2018, Vol. 29 Issue 4, p361-367. 7p.

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Recombination dynamics of localized excitons in Al1-xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy.

Authors: Onuma, T. Chichibu, SF Uchinuma, Y.

Source: Journal of Applied Physics; August 15 2003, Vol. 94 Issue 4, p2449-2453, 5p

Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1 -xN/GaN multiple quantum wells.

Authors: Chichibu, SF Onuma, T. Sota, T.

Source: Journal of Applied Physics; February 15 2003, Vol. 93 Issue 4, p2051-2054, 4p

Helicon-wave-excited-plasma sputtering epitaxy of ZnO on sapphire (0001) substrates.

Authors: Chichibu, S. F. Yoshida, T. Onuma, T.

Source: Journal of Applied Physics; January 15 2002, Vol. 91 Issue 2, p874-877, 4p

Study of encapsulants for annealing Si-implanted GaAs.

Authors: Onuma, T.

Source: Journal of the Electrochemical Society; April 1982, Vol. 129, p837-840, 4p

Range and standard deviation of ion-implanted Si in GaAs.

Authors: Onuma, T.

Source: Journal of Applied Physics; October 1981, Vol. 52, p6128-6132, 5p

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Evaluation of heat input during friction stir welding of aluminium alloys.

Authors: Yi, D. Onuma, T. Mironov, S. et al.

Source: Science & Technology of Welding & Joining. Jan2017, Vol. 22 Issue 1, p41-46. 6p. 1 Diagram, 2 Charts, 6 Graphs.

Experimental verification of heat input during friction stir welding of Al alloy 5083.

Authors: Sato, Y. S. Onuma, T. Ikeda, K. et al.

Source: Science & Technology of Welding & Joining. May2016, Vol. 21 Issue 4, p325-330. 6p. 2 Diagrams, 1 Chart, 4 Graphs.

Damage Detection in Transparent Materials Using Non-Contact Laser Excitation by Nano-Second Laser Ablation and High-Speed Polarization-imaging Camera.

Authors: Hosoya, N. Umino, R. Kajiwara, I. et al.

Source: Experimental Mechanics; Feb2016, Vol. 56 Issue 2, p339-343, 5p

Major impacts of point defects and impurities on the carrier recombination dynamics in AlN.

Authors: Chichibu, S. F. Onuma, T. Hazu, K.

Source: Applied Physics Letters; November 15 2010, Vol. 97 Issue 20, p201904-1-201904-3, 3p

Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101̄1̄) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy.

Authors: Onuma, T. Uedono, A. Asamizu, H.

Source: Applied Physics Letters; March 1 2010, Vol. 96 Issue 9, p091913-1-091913-3, 3p

Identification of extremely radiative nature of AlN by time-resolved photoluminescence.

Authors: Onuma, T. Hazu, K. Uedono, A.

Source: Applied Physics Letters; February 8 2010, Vol. 96 Issue 6, p061906-1-061906-3, 3p

Reduced defect densities in the ZnO epilayer grown on Si substrates by laser-assisted molecular-beam epitaxy using a ZnS epitaxial buffer layer.

Authors: Onuma, T. Chichibu, S. F. Uedono, A.

Source: Applied Physics Letters; 12/6/2004, Vol. 85 Issue 23, p5586-5588, 3p

In situ spectral control of Zn species during helicon-wave-excited-plasrna sputtering epitaxy of ZnO.

Authors: Koyama, T. Onuma, T. Chichibu, SF

Source: Applied Physics Letters; October 6 2003, Vol. 83 Issue 14, p2973-2975, 3p

Exciton spectra of an AlN epitaxial film on (0001) sapphire substrate grown by low-pressure metalorganic vapor phase epitaxy.

Authors: Onuma, T. Chichibu, S. F. Sota, T.

Source: Applied Physics Letters; July 22 2002, Vol. 81 Issue 4, p652-654, 3p