Search Results - "Plummer J"

Analytical corrections for B1‐inhomogeneity and signal decay in multi‐slice 2D spiral hyperpolarized ¹²⁹Xe MRI using keyhole reconstruction.

Authors: Plummer, J. W. Hussain, R. Bdaiwi, A. S. et al.

Source: Magnetic Resonance in Medicine. Sep2024, Vol. 92 Issue 3, p967-981. 15p.

Subjects: Magnetic resonance imaging, Cystic fibrosis

Construction and use of a clear acrylic phantom to generate a three-dimensional finite element model of the human pelvis from CT data.

Authors: Plummer, J. W. George, P. D. Bidez, M. W.

Source: Experimental Techniques; January/February 1997, Vol. 21, p30-32, 3p

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Metastable boron active concentrations in Si using flash assisted solid phase epitaxy.

Authors: Jain, S. H. Griffin, P. B. Plummer, J. D.

Source: Journal of Applied Physics; 12/15/2004, Vol. 96 Issue 12, p7357-7360, 4p

Hall measurements of bilayer structures.

Authors: Jain, S. H. Griffin, P. B. Plummer, J. D.

Source: Journal of Applied Physics; January 15 2003, Vol. 93 Issue 2, p1060-1063, 4p

Physical processes associated with the deactivation of dopants in laser annealed silicon.

Authors: Takamura, Y. Griffin, P. B. Plummer, J. D.

Source: Journal of Applied Physics; July 1 2002, Vol. 92 Issue 1, p235-244, 10p

Si/SiO2 interface oxidation kinetics.

Authors: Ho, C. P. Plummer, J. D.

Source: Journal of the Electrochemical Society; September 1979, Vol. 126, p1516-1530, 15p

Modeling the diffusion of grown-in Be in molecular beam epitaxy GaAs.

Authors: Hu, J. C. Deal, M. D. Plummer, J. D.

Source: Journal of Applied Physics; August 1 1995, Vol. 78, p1595-1605, 11p

Modeling the diffusion of implanted Be in GaAs.

Authors: Hu, J. C. Deal, M. D. Plummer, J. D.

Source: Journal of Applied Physics; August 1 1995, Vol. 78, p1606-1613, 8p

The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide.

Authors: Allen, E. L. Deal, M. D. Plummer, J. D.

Source: Journal of Applied Physics; April 1 1990, Vol. 67, p3311-3314, 4p

Design for manufacture using a CAD/CAM system.

Authors: Plummer, J. C. S. Hannam, R. G.

Source: Proceedings of the Institution of Mechanical Engineers. Part B, Management & Engineering Manufacture.; August 1983, Vol. 197, p187-195, 9p

Quantitative modeling of Si/SiO2 interface fixed charge.

Authors: Akinwande, A. I. Plummer, J. D.

Source: Journal of the Electrochemical Society; October 1987, Vol. 134, p2565-2580, 16p

Process dependence of the metal semiconductor work function difference.

Authors: Akinwande, A. I. Plummer, J. D.

Source: Journal of the Electrochemical Society; September 1987, Vol. 134, p2297-2303, 7p

Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films.

Authors: Ahn, S. T. Kennel, H. W. Plummer, J. D.

Source: Journal of Applied Physics; November 15 1988, Vol. 64 Issue 1, p4914-4919, 6p

Transmissions of powder films to the infrared spectrum.

Authors: Plummer, J. H.

Source: Journal of the Optical Society of America; December 1936, Vol. 26, p434-438, 5p

Experimental studies of the temperature gradients in glasses of various colors.

Authors: Holscher, H. H. Rough, R. R. Plummer, J. H.

Source: Journal of the American Ceramic Society; December 1 1943, Vol. 26, p398-404, 7p

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