Search Results - "Samuelson, Lars"

Temperature-dependent carrier dynamics in red InGaN quantum wells revealed by cathodoluminescence.

Authors: Usman, Hira Bi, Zhaoxia Gustafsson, Anders et al.

Source: Applied Physics Letters; 5/11/2026, Vol. 128 Issue 19, p1-7, 7p

Investigation on compositional pulling effect of InGaN red multiple quantum wells and its remedy.

Authors: Liu, Chunyu Li, Panpan Usman, Hira et al.

Source: Applied Physics Letters; 5/11/2026, Vol. 128 Issue 19, p1-7, 7p

39‐2: Impact of Acceleration Voltage on Cathodoluminescence for Defect Identification in InGaN Quantum Wells.

Authors: Usman, Hira Bi, Zhaoxia Samuelson, Lars et al.

Source: SID Symposium Digest of Technical Papers; Jun2025 Supplement 1, Vol. 56, p335-337, 3p

26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.

Authors: Björk, Mikael T. Heurlin, Magnus Berg, Martin et al.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p339-341, 3p

Deactivating charged states in colloidal quantum dots by Förster resonance energy transfer.

Authors: Gu, Mi Li, Depeng Ma, Jingrui et al.

Source: Applied Physics Letters; 10/6/2025, Vol. 127 Issue 14, p1-7, 7p

Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire.

Authors: Lazarev, Sergey Kim, Young Yong Gelisio, Luca et al.

Source: Applied Sciences (2076-3417); Oct2021, Vol. 11 Issue 20, p9419, 11p

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs.

Authors: Persson, Axel R. Gustafsson, Anders Bi, Zhaoxia et al.

Source: Applied Physics Letters; 7/10/2023, Vol. 123 Issue 2, p1-7, 7p

Real-time monitoring of the reaction of H2S on GaAs.

Authors: Jönsson, Jan Deppert, Knut Samuelson, Lars

Source: Journal of Applied Physics; November 15 1993, Vol. 74, p6146-6149, 4p

Photocorrosion and film formation of Ga(As,P) electrodes. Photoelectrochemical and surface physical studies.

Authors: Carlsson, Per Holmström, Bertil Samuelson, Lars

Source: Journal of the Electrochemical Society; August 1989, Vol. 136, p2266-2271, 6p

Application of reflectance difference to monitor GaAs wet etching.

Authors: Deppert, Knut Jönsson, Jan Samuelson, Lars

Source: Semiconductor Science & Technology; May 1994, Vol. 9 Issue 5, p1148-1152, 5p

Operation of a ballistic heterojunction permeable base transistor.

Authors: Wernersson, Lars-Erik Litwin, Andrej Samuelson, Lars

Source: IEEE Transactions on Electron Devices; November 1997, Vol. 44, p1829-1836, 8p

52‐1: Invited Paper: INVITED TALK for sub‐area "Emissive, Micro‐LED, and Quantum‐Dot Display": On the strive towards all‐InGaN sub‐2µm sized RGB microLEDs.

Authors: Samuelson, Lars^1,2,3, lars.samuelson@ftf.lth.se

Source: SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p708-708, 1p

Coherently strained and dislocation-free architectured AlGaN/GaN submicron-sized structures.

Authors: Khalilian, Maryam Persson, Axel Lindgren, David et al.

Source: Nano Select; Feb2022, Vol. 3 Issue 2, p471-484, 14p

InP Nanowire Array Solar Cells Achieving 13.8% Efficiency by Exceeding the Ray Optics Limit.

Authors: Dimroth, Frank Witzigmann, Bernd Åberg, Ingvar et al.

Source: Science (pre-March 2025). 3/1/2013, Vol. 339 Issue 6123, p1057-1060. 4p.

Subjects: Electric properties of indium phosphide, Electric properties of nanowires, Efficiency of photovoltaic cells, Performance of photovoltaic cells, Optical resonance, Photovoltaic power generation, Band gaps, Mathematical models, Electromagnetic fields, Optoelectronic device design & construction

Continuous gas-phase synthesis of nanowires with tunable properties.

Authors: Heurlin, Magnus Magnusson, Martin H. Lindgren, David et al.

Source: Nature. 12/6/2012, Vol. 492 Issue 7427, p90-94. 5p. 1 Color Photograph, 1 Black and White Photograph, 2 Graphs.

Subjects: Gas phase reactions, Synthesis of nanowires, Light emitting diodes, Solar cells, Crystallinity

Thermoelectric Characterization of Electronic Properties of GaMnAs Nanowires.

Authors: Wu, Phillip M. Paschoal Jr, Waldomiro Kumar, Sandeep et al.

Source: Journal of Nanotechnology; 2012, p1-5, 5p

Cathodoluminescence spectroscopy and imaging of individual GaN dots.

Authors: Petersson, Anders Gustafsson, Anders Samuelson, Lars

Source: Applied Physics Letters; 6/6/1999, Vol. 74 Issue 23, p3513-3515, 3p

Stability towards photoelectrochemical etching in Ga(As,P) alloys.

Authors: Carlsson, Per Holmström, Bertil Samuelson, Lars

Source: Journal of Applied Physics; January 15 1988, Vol. 63, p530-532, 3p

Semiconductor nanowire array for transparent photovoltaic applications.

Authors: Chen, Yang Hrachowina, Lukas Barrigon, Enrique et al.

Source: Applied Physics Letters; 5/21/2021, Vol. 118 Issue 19, p1-6, 6p

Optical microprism cavities based on dislocation-free GaN.

Authors: Hjort, Filip Khalilian, Maryam Bengtsson, Jörgen et al.

Source: Applied Physics Letters; 12/7/2020, Vol. 117 Issue 23, p1-7, 7p