Search Results - "Samuelson, Lars"

39‐2: Impact of Acceleration Voltage on Cathodoluminescence for Defect Identification in InGaN Quantum Wells.

Authors: Usman, Hira Bi, Zhaoxia Samuelson, Lars et al.

Source: SID Symposium Digest of Technical Papers; Jun2025 Supplement 1, Vol. 56, p335-337, 3p

26‐4: Late‐News Paper: A Bottom‐Up InGaN Technology for Ultra‐High Brightness R,G,B‐Emitting MicroLEDs.

Authors: Björk, Mikael T. Heurlin, Magnus Berg, Martin et al.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, p339-341, 3p

Influence of Contacts and Applied Voltage on a Structure of a Single GaN Nanowire.

Authors: Lazarev, Sergey Kim, Young Yong Gelisio, Luca et al.

Source: Applied Sciences (2076-3417); Oct2021, Vol. 11 Issue 20, p9419, 11p

SID 2024 Author Contact Information.

Source: SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, pI-XVI, 1p

52‐1: Invited Paper: INVITED TALK for sub‐area "Emissive, Micro‐LED, and Quantum‐Dot Display": On the strive towards all‐InGaN sub‐2µm sized RGB microLEDs.

Authors: Samuelson, Lars^1,2,3, lars.samuelson@ftf.lth.se

Source: SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, p708-708, 1p

Correlating cathodoluminescence and scanning transmission electron microscopy for InGaN platelet nano-LEDs.

Authors: Persson, Axel R. Gustafsson, Anders Bi, Zhaoxia et al.

Source: Applied Physics Letters; 7/10/2023, Vol. 123 Issue 2, p1-7, 7p

Semiconductor nanowire array for transparent photovoltaic applications.

Authors: Chen, Yang Hrachowina, Lukas Barrigon, Enrique et al.

Source: Applied Physics Letters; 5/21/2021, Vol. 118 Issue 19, p1-6, 6p

Optical microprism cavities based on dislocation-free GaN.

Authors: Hjort, Filip Khalilian, Maryam Bengtsson, Jörgen et al.

Source: Applied Physics Letters; 12/7/2020, Vol. 117 Issue 23, p1-7, 7p

Operation of a ballistic heterojunction permeable base transistor.

Authors: Wernersson, Lars-Erik Litwin, Andrej Samuelson, Lars

Source: IEEE Transactions on Electron Devices; November 1997, Vol. 44, p1829-1836, 8p

Issue Information.

Source: SID Symposium Digest of Technical Papers; Jun2024, Vol. 55 Issue 1, pi-lxiii, 1p

Continuous gas-phase synthesis of nanowires with tunable properties.

Authors: Heurlin, Magnus Magnusson, Martin H. Lindgren, David et al.

Source: Nature. 12/6/2012, Vol. 492 Issue 7427, p90-94. 5p. 1 Color Photograph, 1 Black and White Photograph, 2 Graphs.

Subjects: Gas phase reactions, Synthesis of nanowires, Light emitting diodes, Solar cells, Crystallinity

Issue Information.

Source: SID Symposium Digest of Technical Papers; Jun2025, Vol. 56 Issue 1, pi-lxiv, 1p

Integration, gap formation, and sharpening of III-V heterostructure nanowires by selective etching.

Authors: Kallesøe, Christian Mølhave, Kristian Larsen, Kasper F. et al.

Source: Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Jan2010, Vol. 28 Issue 1, p21-26, 6p, 7 Diagrams, 1 Chart, 1 Graph

Mass Transport Model for Semiconductor Nanowire Growth.

Authors: Johansson, Jonas Svensson, C. Patrik T. Mårtensson, Thomas et al.

Source: Journal of Physical Chemistry B; 7/21/2005, Vol. 109 Issue 28, p13567-13571, 5p

Swedish Societal Transformation and the Question of Tax Incentives for Charitable Contributions to Civil Society¹.

Authors: Dimitrievski, Nick¹ (AUTHOR) nick.dimitrievski@kau.se

Source: Nordic Tax Journal. 2024, Vol. 2024 Issue 1, p95-122. 28p.

Gallium phosphide nanowire arrays and their possible application in cellular force investigations.

Authors: Suyatin, Dmitry B. Hällström, Waldemar Samuelson, Lars et al.

Source: Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; Nov2009, Vol. 27 Issue 6, p3092-3094, 3p, 3 Black and White Photographs, 1 Diagram, 1 Chart

Nanowire-Based Electrode for Acute In Vivo Neural Recordings in the Brain.

Authors: Suyatin, Dmitry B. Wallman, Lars Thelin, Jonas et al.

Source: PLoS ONE. Feb2013, Vol. 8 Issue 2, p1-8. 8p.

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

Authors: Storm, Kristian Halvardsson, Filip Heurlin, Magnus et al.

Source: Nature Nanotechnology. Nov2012, Vol. 7 Issue 11, p718-722. 5p. 1 Color Photograph, 2 Graphs.

Structural properties of 〈111〉B -oriented III–V nanowires.

Authors: Johansson, Jonas Karlsson, Lisa S. Patrik T. Svensson, C. et al.

Source: Nature Materials. Jul2006, Vol. 5 Issue 7, p574-580. 7p. 1 Black and White Photograph, 2 Diagrams, 2 Graphs.

Solid-phase diffusion mechanism for GaAs nanowire growth.

Authors: Persson, Ann I. Larsson, Magnus W. Stenström, Stig et al.

Source: Nature Materials. Oct2004, Vol. 3 Issue 10, p677-681. 5p. 1 Color Photograph, 1 Black and White Photograph, 2 Graphs.