Search Results - "Semiconductor materials"

Application of Machine Learning in Predicting the Properties of Two-Dimensional Semiconductor Materials.

Authors: Yang, Jia Tang, Lingli Wang, Yunlong et al.

Source: Nanomaterials (2079-4991). Jun2026, Vol. 16 Issue 11, p650. 42p.

Subjects: Machine learning, Semiconductor materials, Deep learning, Graph neural networks, Magnetism, Density functional theory, Band gaps

完全Inverse-Heusler合金Ti2MnSi/ScTiMnSi（100）异质结的结构、磁性和电子.

Alternate Title: Structural,magnetic and electronic properties of all inverse-Heusler alloy Ti2MnSi/ScTiMnSi (100) heterojunction.

Authors: 顾玉鑫 何建桥 沈光先 et al.

Source: Journal of Atomic & Molecular Physics (1000-0364). Jun2026, Vol. 43 Issue 3, p036003-1-036003-10. 10p.

Microtemperature photothermal excitation of semiconductor material influenced by electromagnetic Hall current and variable thermal conductivity.

Authors: Lotfy, Kh.^1,2 (AUTHOR) khlotfy_1@yahoo.com

Source: Waves in Random & Complex Media. Jun2026, Vol. 36 Issue 3, p2893-2910. 18p.

X-Ray Characterization of Semiconductor Materials and Advanced Packaging: A Perspective on Multidimensional Structural Analysis.

Authors: Jiang, Yumeng Zhang, Zhenwei An, Zhongyi et al.

Source: Crystals (2073-4352); Apr2026, Vol. 16 Issue 4, p265, 33p

Microstructure Semiconductor Materials and Optoelectronic Applications.

Authors: Wang, Zhou Liu, Xiaoyan

Source: Nanomaterials (2079-4991). Mar2026, Vol. 16 Issue 5, p336. 4p.

Subjects: Semiconductor materials, Optoelectronics, Photonic crystals, Nanowires, Quantum wells, Thin film transistors, Biosensors, Quantum dots

Self-Assembling Conjugated Organic Materials with a Silazane Anchor Group: Synthesis, Self-Organization, and Semiconductor Properties.

Authors: Bobrova, Elizaveta A. Skorotetсky, Maxim S. Kuleshov, Bogdan S. et al.

Source: Nanomaterials (2079-4991). Jan2026, Vol. 16 Issue 2, p124. 11p.

Subjects: Semiconductor materials, Organic field-effect transistors, Conjugated polymers, Molecular self-assembly, Thin film deposition, Chemical synthesis, Silazanes

JX Metals Plans to Expand Investment as Chip Demand Surges.

Authors: Tamura, Yasutaka (AUTHOR)

Source: Bloomberg.com. 3/29/2026, pN.PAG-N.PAG. 1p.

Evaluation of SOI Lock-in Pixels with Improved Modulation Contrast.

Authors: Shinohara, Yudai Yasutomi, Keita Imai, Ryo et al.

Source: Journal of Imaging Science & Technology; Mar/Apr2026, Vol. 70 Issue 2, p1-8, 8p

Self–Heating Effect in GaN Diode with Graded InGaN Mesa.

Authors: Zozulia, V. O. Botsula, O. V. Pavlova, L. V. et al.

Source: Journal of Nano- & Electronic Physics; 2026, Vol. 18 Issue 2, p02006-1-02006-6, 6p

A computational study of thermoelectric conversion in the PbSexTe1-x semiconductor alloys.

Alternate Title: Розрахунок термоелектричної конверсiї у напiвпровiдникових сплавах PbSexTe1-x

Authors: Slimane, M. Kaid Brahmi, B. N. Bouchenaki, M. et al.

Source: Condensed Matter Physics. 2025, Vol. 28 Issue 4, p1-11. 11p.

Subjects: Thermoelectric conversion, Semiconductor materials, Density functional theory, Band gaps, Numerical analysis, Thermoelectric effects, Electronic materials, Crystallography

A novel photo-elasto-thermodiffusion waves model based on electron-hole deformation of semiconductor medium.

Authors: Lotfy, Kh. Elidy, Eslam. S. El-Bary, Alaa A. et al.

Source: Waves in Random & Complex Media. Dec2025, Vol. 35 Issue 7, p13947-13964. 18p.

Structure and dielectric properties of WO3 films at terahertz band.

Authors: Guo, Yongbin Wang, Dao Wang, Zhongmin et al.

Source: Materials Technology; Dec2025, Vol. 40 Issue 1, p1-5, 5p

Advanced Inorganic Semiconductor Materials, 3rd Edition.

Authors: Wang, Sake Sun, Minglei Hung, Nguyen Tuan

Source: Inorganics. Dec2025, Vol. 13 Issue 12, p409. 7p.

Comprehensive Spectroscopic Study of Competing Recombination Channels and Thermal Quenching Mechanisms in β-Ga 2 O 3 Single Crystals.

Authors: Bakytkyzy, Aizat Karipbayev, Zhakyp T. Dauletbekova, Alma et al.

Source: Crystals (2073-4352); Oct2025, Vol. 15 Issue 10, p909, 16p

DIELECTRIC CONSTANTS AND TRANSVERSE EFFECTIVE CHARGES IN THE QUINARY ALLOY GaxIn1-xNySbzAs1-y-z LATTICE MATCHED TO InAs, GaSb AND GaAs.

Alternate Title: ДІЕЛЕКТРИЧНІ КОНСТАНТИ ТА ПОПЕРЕЧНІ ЕФЕКТИВНІ ЗАРЯДИ У П'ЯТИКОМПОНЕНТНОМУ СПЛАВІ GaxIn1-xNySbzAs1-y-z З ҐРАТКОЮ, УЗГОДЖЕНОЮ З InAs, GaSb ТА GaAs.

Authors: Zerroukhi, H. Abid, H. Baaziz, H. et al.

Source: East European Journal of Physics. 2025, Issue 4, p517-526. 10p.

From Pure to Sn‐Doped CsPbBr3: Analyzing the Evolution of Optoelectronic Properties for Improved Semiconductor Detector.

Authors: Zaghrane, Abderrahmane Dzaferovic‐Masic, Emina Abbassi, Abderrahman et al.

Source: Asia-Pacific Journal of Chemical Engineering. Sep/Oct2025, Vol. 20 Issue 5, p1-13. 13p.

Subjects: Semiconductor detectors, Semiconductor materials, Nuclear counters, Dynamic stability, Band gaps, Optoelectronics, Sustainability

Look‐Up Table Framework for p‐Channel Double‐Gate MOSFETs: Silicon vs. Germanium Evaluation.

Authors: Ahmed, Rekib Uddin Saha, Prabir Majumdar, Shubhankar et al.

Source: International Journal of Numerical Modelling. May/Jun2026, Vol. 39 Issue 3, p1-17. 17p.

Subjects: Metal oxide semiconductor field-effect transistors, Semiconductor materials, Complementary metal oxide semiconductors, Computer simulation

Inductively coupled plasma reactive ion etching of rutile-structured Ge0.64Sn0.36O2 with BCl3/Ar plasmas.

Authors: Banta, Charlotte Patel, Satyam P. Abed, Ahmad M. et al.

Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films. May2026, Vol. 44 Issue 3, p1-9. 9p.

Subjects: Plasma etching, Semiconductor materials, Surface roughness, Radio frequency integrated circuits, Wide gap semiconductors, Low temperature plasmas, Power semiconductors

Beyond the Silicon Plateau: A Convergence of Novel Materials for Transistor Evolution.

Authors: Lee, Jung Hun Kim, Jae Young Lee, Hyeon-Ji et al.

Source: Nano-Micro Letters. 9/15/2025, Vol. 18 Issue 1, p1-59. 59p.

UV-promoted surface-enhanced Raman spectroscopy via heterojunction of few-layer MoS2 flakes on acceptor-rich β-Ga2O3 microstrips.

Authors: Jia, Wenjing Yan, Yinzhou Yao, Yao et al.

Source: Discover Nano; 9/5/2025, Vol. 20 Issue 1, p1-14, 14p