Search Results - "Tang, Chuying"

Simulation of High Breakdown Voltage, Improved Current Collapse Suppression, and Enhanced Frequency Response AlGaN/GaN HEMT Using A Double Floating Field Plate.

Authors: Wang, Peiran Deng, Chenkai Cheng, Hongyu et al.

Source: Crystals (2073-4352); Jan2023, Vol. 13 Issue 1, p110, 10p

The Atomic Layer Etching Technique with Surface Treatment Function for InAlN/GaN Heterostructure.

Authors: Du, Fangzhou Jiang, Yang Wu, Zhanxia et al.

Source: Crystals (2073-4352); May2022, Vol. 12 Issue 5, pN.PAG-N.PAG, 11p

Improvement of DC Performance and RF Characteristics in GaN-Based HEMTs Using SiN x Stress-Engineering Technique.

Authors: Deng, Chenkai Wang, Peiran Tang, Chuying et al.

Source: Nanomaterials (2079-4991). Sep2024, Vol. 14 Issue 18, p1471. 9p.

Subjects: Frequencies of oscillating systems, Passivation, Telecommunication systems, Electric fields, Gallium nitride, Modulation-doped field-effect transistors

Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers.

Authors: Wang, Peiran Deng, Chenkai Tang, Chuying et al.

Source: Nanomaterials (2079-4991). Apr2025, Vol. 15 Issue 8, p574. 11p.

Subjects: Modulation-doped field-effect transistors, Electron mobility, Gallium nitride, Computer simulation, Trenches

Improved gate leakage current and breakdown voltage of InAlN/GaN MIS-HEMTs by HfAlOx-based charge-trapping layer dielectric and in situ O3 treatment.

Authors: Du, Fangzhou Jiang, Yang Wang, Peiran et al.

Source: Applied Physics Letters; 1/6/2025, Vol. 126 Issue 1, p1-6, 6p

Charge trapping gate stack enabled non-recessed normally off AlGaN/GaN HEMT with high threshold voltage stability.

Authors: Wen, Kangyao He, Jiaqi Jiang, Yang et al.

Source: Applied Physics Letters; 9/30/2024, Vol. 125 Issue 14, p1-5, 5p

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance.

Authors: Jiang, Yang Du, FangZhou Wen, KangYao et al.

Source: Applied Physics Letters; 7/15/2024, Vol. 125 Issue 3, p1-6, 6p

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters.

Authors: Jiang, Yang Du, FangZhou Wen, KangYao et al.

Source: Applied Physics Letters; 6/10/2024, Vol. 124 Issue 24, p1-6, 6p

Improved breakdown performance in recessed-gate normally off GaN MIS-HEMTs by regrown fishbone trench.

Authors: He, JiaQi Wang, PeiRan Du, FangZhou et al.

Source: Applied Physics Letters; 3/25/2024, Vol. 124 Issue 13, p1-5, 5p

Interface charge engineering on an in situ SiNx/AlGaN/GaN platform for normally off GaN MIS-HEMTs with improved breakdown performance.

Authors: He, JiaQi Wen, KangYao Wang, PeiRan et al.

Source: Applied Physics Letters; 9/4/2023, Vol. 123 Issue 10, p1-5, 5p

Carrier transport mechanism of Mg/Pt/Au Ohmic contact on p-GaN/AlGaN/GaN platform with ultra-low resistivity.

Authors: Tang, Chuying Fu, Chun Jiang, Yang et al.

Source: Applied Physics Letters; 8/28/2023, Vol. 123 Issue 9, p1-5, 5p

Current collapse suppression in AlGaN/GaN HEMTs using dual-layer SiNx stressor passivation.

Authors: Deng, Chenkai Cheng, Wei-Chih Chen, XiGuang et al.

Source: Applied Physics Letters; 6/5/2023, Vol. 122 Issue 23, p1-5, 5p

Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic contact on non-recessed i-InAlN/GaN heterostructures with ultra-low resistance.

Authors: Jiang, Yang Du, FangZhou He, JiaQi et al.

Source: Applied Physics Letters; 11/21/2022, Vol. 121 Issue 21, p1-8, 8p

Quasi-normally off AlGaN/GaN high-electron-mobility transistors with p-type CuOx gate synthesized through magnetron reactive sputtering.

Authors: Lu, Honghao Wen, Kangyao Du, Fangzhou et al.

Source: Materials Science in Semiconductor Processing; Feb2023, Vol. 154, pN.PAG-N.PAG, 1p

Atomic layer etching technique for InAlN/GaN heterostructure with AlN etch-stop layer.

Authors: Du, Fangzhou Jiang, Yang Qiao, Zepeng et al.

Source: Materials Science in Semiconductor Processing; Jun2022, Vol. 143, pN.PAG-N.PAG, 1p

Collective Killings in Rural China During the Cultural Revolution

Authors: Yang Su

Resource Type: eBook.

Subjects: Genocide--China--History--20th century

Categories: HISTORY / Asia / China