Search Results - "Tokuda Y"

Comparison of Health Locus of Control between Physicians and the General Public

Authors: Tokuda, Y. Okubo, T. Yanai, H. et al.

Source: Health Education Journal. 2010 69(1):63-73.

Peer Reviewed: Y

Page Count: 11

Descriptors: Locus of Control, Structural Equation Models, Physicians, Foreign Countries, Health Behavior, Surveys, Case Studies, Item Analysis, Scores, Family (Sociological Unit), Beliefs, Comparative Analysis

Geographic Terms: Japan

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Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy.

Authors: Kimura, T. Shimazu, H. Kataoka, K. et al.

Source: Applied Physics Letters; 1/29/2024, Vol. 124 Issue 5, p1-6, 6p

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Quantitative analyses of oxidation states for cubic SrMnO3 and orthorhombic SrMnO2.5 with electron energy loss spectroscopy.

Authors: Kobayashi, S. Tokuda, Y. Mizoguchi, T.

Source: Journal of Applied Physics; December 15 2010, Vol. 108 Issue 12, p124903-1-124903-4, 4p

Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression.

Authors: Kato, M. Sobue, F. Ichimura, M. et al.

Source: Solid-State Electronics; December 2002, Vol. 46 Issue 12, p2099-2104, 6p

Electrical transport properties in LiMn2O4, Li0.95Mn2O4, and LiMn1.95B0.05O4 (B=AI or Ga) around room temperature.

Authors: Iguchi, E. Tokuda, Y. Nakatsugawa, H.

Source: Journal of Applied Physics; February 15 2002, Vol. 91 Issue 4, p2149-2154, 6p

Ion-beam annealing of electron traps in n-type Si by post-H+ implantation.

Authors: Ito, A. Tokuda, Y.

Source: Journal of Applied Physics; August 1 1997, Vol. 82, p1053-1057, 5p

Precise evaluation of deep-level concentrations in capacitance transient analyses.

Authors: Shiraki, H. Tokuda, Y. Sassa, K.

Source: Journal of Applied Physics; July 15 1994, Vol. 76, p791-795, 5p

Effects of an electric field on exciton recombination in three-step asymmetric coupled quantum wells.

Authors: Brandt, O. Kanamoto, K. Tokuda, Y.

Source: Journal of Applied Physics; February 15 1994, Vol. 75, p2105-2109, 5p

Evaluation of interface states in MOS structures by DLTS with a bipolar rectangular weighting function.

Authors: Tokuda, Y.

Source: Journal of Physics: D Applied Physics; May 14 1981, Vol. 14, p895-898, 4p

Hydrogen-implantation-induced activation in phosphorus-implanted silicon.

Authors: Tokuda, Y. Hasebe, Y. Ito, A.

Source: Semiconductor Science & Technology; December 1996, Vol. 11, p1821-1825, 5p

Depth profiles of thermal donors formed at 450°C in oxygen-rich n-type silicon.

Authors: Tokuda, Y. Katayama, M. Hattori, T.

Source: Semiconductor Science & Technology; February 1993, Vol. 8, p163-166, 4p

Studies of defects in neutron-irradiated p-type silicon by admittance measurements of n+-p diodes.

Authors: Tokuda, Y. Usami, A.

Source: Journal of Applied Physics; February 1978, Vol. 49, p603-607, 5p

Studies of annealing of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors.

Authors: Tokuda, Y. Usami, A.

Source: Journal of Applied Physics; January 1978, Vol. 49, p181-187, 7p

Admittance studies of neutron-irradiated silicon p+-n diodes.

Authors: Tokuda, Y. Usami, A.

Source: Journal of Applied Physics; April 1977, Vol. 48, p1668-1672, 5p

Investigation of neutron-produced defects in silicon by transconductance measurements of junction field-effect transistors.

Authors: Tokuda, Y. Usami, A.

Source: Journal of Applied Physics; November 1976, Vol. 47, p4952-4959, 8p

Studies of deep-level defects in flash lamp annealing of ion-implanted silicon.

Authors: Usami, A. Tokuda, Y. Katayama, M.

Source: Journal of Physics: D Applied Physics; June 14 1986, Vol. 19, p1079-1089, 11p

Effect of oxygen and copper on the defect cluster in neutron-irradiated p-type silicon.

Authors: Usami, A. Tokuda, Y.

Source: Journal of Applied Physics; July 1974, Vol. 45, p2823-2831, 9p