Search Results - "Wada, O."

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Fourier transformed photoreflectance characterization of interface electric fields in GaAs/GaInP heterojunction bipolar transistor wafers.

Authors: Kita, T. Kakutani, T. Wada, O.

Source: Journal of Applied Physics; November 15 2003, Vol. 94 Issue 10, p6487-6490, 4p

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Control of Zn doping for growth of InP pn junction by liquid phase epitaxy.

Authors: Wada, O.

Source: Journal of the Electrochemical Society; October 1980, Vol. 127, p2278-2284, 7p

Process for GaAs monolithic integration applied to Gunn-effect logic circuits.

Authors: Wada, O.

Source: Journal of the Electrochemical Society; October 1976, Vol. 123, p1546-1551, 6p

Improved photolithographic method of metallization applied to fabrication of planar Gunneffect devices.

Authors: Wada, O.

Source: Journal of the Electrochemical Society; March 1976, Vol. 123, p420-423, 4p

Structure of stacking faults formed in pairs in a ZnSe epitaxial layer on a GaAs(001) buffer layer.

Authors: Tanimura, J. Wada, O. Ogama, T.

Source: Journal of Applied Physics; June 15 1995, Vol. 77, p6223-6227, 5p

Transmission electron microscopy study of the environmental degradation in Ba2YCu3O7-y.

Authors: Wada, O. Odaka, T. Wakata, M.

Source: Journal of Applied Physics; November 15 1990, Vol. 68, p5283-5288, 6p

A new fabrication technique for optoelectronic integrated circuits (OEIC's)—the graded-step process—applied to the fabrication of AlGaAs/GaAs PIN/FET and PIN/amplifier.

Authors: Wada, O. Miura, S. Machida, H.

Source: Journal of the Electrochemical Society; August 1985, Vol. 132, p1996-2002, 7p

Interaction of deep-level traps with the lowest and upper conduction minima in InP.

Authors: Wada, O.

Source: Journal of Applied Physics; January 1980, Vol. 51, p423-432, 10p

InP Schottky contacts with increased barrier height.

Authors: Wada, O.

Source: Solid-State Electronics; May 1982, Vol. 25, p381-387, 7p

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New fabricating method of planar Gunn-effect devices and integrated circuits.

Authors: Wada, O.

Source: Proceedings of the IEEE; April 1976, Vol. 64, p566-568, 3p

Ultrashort-pulse-controlled all-optical modulation by interband and intersubband transitions in doped quantum wells.

Authors: Neogi, A. Wada, O. Takahashi, Y.

Source: Optics Letters; August 1 1998, Vol. 23 Issue 15, p1212-1214, 3p

Control of Fiber Form and Yarn and Fabric Structure.

Authors: Wada, O.¹

Source: Journal of the Textile Institute. 1992, Vol. 83 Issue 3, p322-347. 26p. 22 Diagrams, 2 Charts, 2 Graphs.

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Mask preparation for small dimension ion milling by two step lift-off process.

Authors: Wada, O.

Source: Journal of the Electrochemical Society; June 1977, Vol. 124, p959-960, 2p

A Dual-Pass High Current Density Resonant Tunneling Diode for Terahertz Wave Applications.

Authors: Jacobs, K. J. P. Stevens, B. J. Wada, O. et al.

Source: IEEE Electron Device Letters; Dec2015, Vol. 36 Issue 12, p1295-1298, 4p

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Artificial control of optical gain polarization by stacking quantum dot layers.

Authors: Kita, T. Tamura, N. Wada, O.

Source: Applied Physics Letters; May 22 2006, Vol. 88 Issue 21, p211106-211106, 1p