Search Results - "Wellmann, Peter"

Fabrication of SiC-on-Insulator (SiCOI) Layers by Chemical Vapor Deposition of 3C-SiC on Si-in-Insulator Substrates at Low Deposition Temperatures of 1120 °C.

Authors: Steiner, Johannes Schultheiß, Jana Wang, Shouzhong et al.

Source: Crystals (2073-4352); Nov2023, Vol. 13 Issue 11, p1590, 9p

Synthesis of BaZrS 3 and BaS 3 Thin Films: High and Low Temperature Approaches.

Authors: Freund, Tim Jamshaid, Sumbal Monavvar, Milad et al.

Source: Crystals (2073-4352); Mar2024, Vol. 14 Issue 3, p267, 18p

Multiscale Simulations for Defect-Controlled Processing of Group IV Materials.

Authors: Calogero, Gaetano Deretzis, Ioannis Fisicaro, Giuseppe et al.

Source: Crystals (2073-4352); Dec2022, Vol. 12 Issue 12, p1701, 21p

Determination of Thermal Properties of Carbon Materials above 2000 °C for Application in High Temperature Crystal Growth.

Authors: Ihle, Jonas Wellmann, Peter J.

Source: Crystal Research & Technology; Jan2025, Vol. 60 Issue 1, p1-12, 12p

Synthesis and Characterization of BaZrS3 Thin Films via Stacked Layer Methodology: A Comparative Study of BaZrS3 on Zirconium Foil and Silicon Carbide Substrates.

Authors: Jamshaid, Sumbal Cicconi, Maria Rita Heiss, Wolfgang et al.

Source: Advanced Engineering Materials; Sep2024, Vol. 26 Issue 18, p1-7, 7p

Effect of Growth Conditions on the Surface Morphology and Defect Density of CS‐PVT‐Grown 3C‐SiC.

Authors: Kollmuss, Manuel La Via, Francesco Wellmann, Peter J.

Source: Crystal Research & Technology; Jul2023, Vol. 58 Issue 7, p1-10, 10p

Dislocation arrangements in 4H‐SiC and their influence on the local crystal lattice properties.

Authors: Roder, Melissa Steiner, Johannes Wellmann, Peter et al.

Source: Journal of Applied Crystallography; Jun2023, Vol. 56 Issue 3, p776-786, 11p

Flow Stability, Convective Heat Transfer and Chemical Reactions in Ammonothermal Autoclaves—Insights by In Situ Measurements of Fluid Temperatures.

Authors: Schimmel, Saskia Kobelt, Ines Heinlein, Lukas et al.

Source: Crystals (2073-4352); Sep2020, Vol. 10 Issue 9, p723, 1p

Determination of site occupancy of boron in 6H–SiC by multiple-wavelength neutron holography.

Authors: Hayashi, Kouichi Lederer, Maximilian Fukumoto, Yohei et al.

Source: Applied Physics Letters; 3/28/2022, Vol. 120 Issue 13, p1-6, 6p

Vacuum-Free and Highly Dense Nanoparticle Based Low-Band-Gap CuInSe2 Thin-Films Manufactured by Face-to-Face Annealing with Application of Uniaxial Mechanical Pressure.

Authors: Schuster, Matthias Stapf, Dominik Osterrieder, Tobias et al.

Source: Coatings (2079-6412); Aug2019, Vol. 9 Issue 8, p484-484, 1p

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

Authors: Wellmann, Peter J.¹

Source: Zeitschrift für Anorganische und Allgemeine Chemie. 11/17/2017, Vol. 643 Issue 21, p1312-1322. 11p.

Epitaxial Metal Halide Perovskites by Inkjet‐Printing on Various Substrates.

Authors: Sytnyk, Mykhailo Yousefi‐Amin, Amir‐Abbas Freund, Tim et al.

Source: Advanced Functional Materials; 10/22/2020, Vol. 30 Issue 43, p1-10, 10p

Investigation of the Growth Kinetics of SiC Crystals during Physical Vapor Transport Growth by the Application of In Situ 3D Computed Tomography Visualization.

Authors: Arzig, Matthias Salamon, Michael Uhlmann, Norman et al.

Source: Advanced Engineering Materials; Sep2020, Vol. 22 Issue 9, p1-6, 6p

New Data Sources for Demographic Research.

Authors: Breen, Casey F. Feehan, Dennis M.

Source: Population & Development Review. Mar2025, Vol. 51 Issue 1, p539-573. 35p.

Depth-resolved and temperature dependent analysis of phase formation processes in Cu-Zn-Sn-Se films on ZnO substrates.

Authors: Stroth, Christiane Sayed, Mohamed Ohland, Jörg et al.

Source: Journal of Materials Science: Materials in Electronics; Jun2017, Vol. 28 Issue 11, p7730-7738, 9p

Investigation of amorphous-SiC thin film deposition by RF magnetron sputtering for optical applications.

Authors: Chaussende, Didier Tabouret, Vincent Crisci, Alexandre et al.

Source: Materials Science in Semiconductor Processing; Nov2024, Vol. 182, pN.PAG-N.PAG, 1p

Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process.

Authors: Steiner, Johannes Wellmann, Peter J.

Source: Materials (1996-1944). Mar2022, Vol. 15 Issue 5, p1897. 1p.

Novel Photonic Applications of Silicon Carbide.

Authors: Ou, Haiyan Shi, Xiaodong Lu, Yaoqin et al.

Source: Materials (1996-1944). Feb2023, Vol. 16 Issue 3, p1014. 29p.

Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging.

Authors: Häusler, Jonas Schimmel, Saskia Wellmann, Peter et al.

Source: Chemistry - A European Journal. 9/7/2017, Vol. 23 Issue 50, p12275-12282. 8p.

The 50th Anniversary of the German Association for Crystal Growth, DGKK.

Authors: Danilewsky, Andreas Wellmann, Peter Miller, Wolfram

Source: Crystal Research & Technology; Feb2020, Vol. 55 Issue 2, pN.PAG-N.PAG, 1p