Search Results - "Xu, Piao-Rong"

A surface-potential-based electrical model for amorphous InGaZnO electric-double-layer transistors with electrolyte insulation.

Authors: Xu, Piao-Rong Zeng, Qing-Min Wang, Lu et al.

Source: European Physical Journal - Applied Physics; 2025, Vol. 100, p1-8, 8p

A numerical model of electrical characteristics for the monolayer graphene field effect transistors.

Authors: Xiao, Xiang-Jie Xu, Piao-Rong Liu, Gen-Hua et al.

Source: European Physical Journal - Applied Physics; 2019, Vol. 86 Issue 3, p1-6, 6p

Threshold-voltage shift model based on electron tunneling under positive gate bias stress for amorphous InGaZnO thin-film transistors.

Authors: Xu, Piao-Rong Yao, Ruo-He

Source: Displays. Jul2018, Vol. 53, p14-17. 4p.

Subjects: Threshold voltage, Thin film transistors, Indium gallium zinc oxide, Strains & stresses (Mechanics), Electron tunneling

Effects of electric and magnetic fields on electronic states and transport of a Hall bar.

Authors: Liu, Gen-Hua Zhou, Hui-Ying Xu, Piao-Rong

Source: Physics Letters A. Jan2020, Vol. 384 Issue 1, pN.PAG-N.PAG. 1p.

Subjects: Magnetic field effects, Magnetic fields, Quantum spin Hall effect, S-matrix theory, Electric fields, Quantum wells, Hall effect