Search Results - "Yoon, Chansoo"

Dual Bipolar Resistive Switching in Wafer‐Scalable 2D Perovskite Oxide Nanosheets‐Based Memristor.

Authors: Kim, Sohwi Yoon, Chansoo Yim, Haena et al.

Source: Advanced Science. 2/23/2026, Vol. 13 Issue 11, p1-9. 9p.

Filamentary-based gradual dual resistive switching in the TiO2/Al2O3 bilayer for remote supervised method.

Authors: Ryu, Woohyeon Hu, Suman Yoon, Chansoo et al.

Source: NPG Asia Materials; 4/18/2026, Vol. 18 Issue 1, p1-11, 11p

Mechanosensory neuron implemented by a single freestanding epitaxial SrTiO3 capacitor.

Authors: Kim, Sohwi Yoon, Chansoo Jeon, Jihoon et al.

Source: NPJ Flexible Electronics; 1/3/2026, Vol. 10 Issue 1, p1-9, 9p

Progressive and Stable Synaptic Plasticity with Femtojoule Energy Consumption by the Interface Engineering of a Metal/Ferroelectric/Semiconductor.

Authors: Kim, Sohwi Yoon, Chansoo Oh, Gwangtaek et al.

Source: Advanced Science. 8/5/2022, Vol. 9 Issue 22, p1-9. 9p.

Layer control of Sr1.8Bi0.2Nan-3NbnO3n+1 (n = 3–5) perovskite nanosheets: dielectric to ferroelectric transition of film deposited by Langmuir Blodgett method.

Authors: Yoo, So-Yeon Yim, Haena Ryu, Ahrom et al.

Source: NPJ 2D Materials & Applications; 8/11/2023, Vol. 7 Issue 1, p1-7, 7p

Implementation of threshold- and memory-switching memristors based on electrochemical metallization in an identical ferroelectric electrolyte.

Authors: Yoon, Chansoo Oh, Gwangtaek Kim, Sohwi et al.

Source: NPG Asia Materials; 5/26/2023, Vol. 15 Issue 1, p1-11, 11p

Ion-Movement-Based Synaptic Device for Brain-Inspired Computing.

Authors: Yoon, Chansoo Oh, Gwangtaek Park, Bae Ho

Source: Nanomaterials (2079-4991). May2022, Vol. 12 Issue 10, p1728-1728. 29p.

Subjects: Computer systems, Artificial intelligence, Internet of things, Energy consumption, Artificial synapses

Understanding filamentary growth and rupture by Ag ion migration through single-crystalline 2D layered CrPS4.

Authors: Lee, Mi Jung Kim, Sung-Hoon Lee, Sangik et al.

Source: NPG Asia Materials; 12/18/2020, Vol. 12 Issue 1, p1-9, 9p

Temperature dependence of tunneling current in Pt/Nb:SrTiO3 Schottky junction.

Authors: Kim, Yeon Soo Hwang, Sung Moon Yoon, Chansoo et al.

Source: Applied Physics Letters; 1/13/2020, Vol. 116 Issue 2, p1-5, 5p, 4 Graphs

Synaptic MoS2 transistors based on charge trapping two-dimensionally confined in Sr2-xCoxNb3O10 nanosheets.

Authors: Oh, DaYea Yim, Haena Yoo, So Yeon et al.

Source: Materials Science in Semiconductor Processing; Jun2023, Vol. 160, pN.PAG-N.PAG, 1p

Real-time device-scale imaging of conducting filament dynamics in resistive switching materials.

Authors: Lee, Keundong Tchoe, Youngbin Yoon, Hosang et al.

Source: Scientific Reports. 6/10/2016, p27451. 1p.

Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene.

Authors: Lee, Keundong Lee, Sangik Oh, Sungtaek et al.

Source: Scientific Reports. 7/10/2015, p11279. 1p.