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Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer.

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Title: Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer.
Authors: Mohd Halizan, Muhammad1, Roslan, Nur1, Abdullah, Shahino, Abdul Halim, Nurain1, Velayutham, Thamil2, Woon, Kai2, Supangat, Azzuliani2, azzuliani@um.edu.my
Source: Journal of Materials Science: Materials in Electronics; Aug2017, Vol. 28 Issue 16, p11961-11968, 8p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 124255232
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Aug2017, Vol. 28 Issue 16, p11961-11968, 8p
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      – Type: doi
        Value: 10.1007/s10854-017-7005-4
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      – Code: eng
        Text: English
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        PageCount: 8
        StartPage: 11961
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      – TitleFull: Improving the operational voltage of vertical organic field effect transistor (VOFET) by altering the morphology of dielectric layer.
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          Name:
            NameFull: Mohd Halizan, Muhammad
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            NameFull: Roslan, Nur
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            NameFull: Abdullah, Shahino
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            NameFull: Abdul Halim, Nurain
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            NameFull: Velayutham, Thamil
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            NameFull: Woon, Kai
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            NameFull: Supangat, Azzuliani
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            – D: 15
              M: 08
              Text: Aug2017
              Type: published
              Y: 2017
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              Value: 28
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              Value: 16
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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