Mehonic, A., Gerard, T., & Kenyon, A. J. (2017). Light-activated resistance switching in SiOx RRAM devices. Applied Physics Letters, 111(23), 1. https://doi.org/10.1063/1.5009069
Chicago Style (17th ed.) CitationMehonic, A., T. Gerard, and A. J. Kenyon. "Light-activated Resistance Switching in SiOx RRAM Devices." Applied Physics Letters 111, no. 23 (2017): 1. https://doi.org/10.1063/1.5009069.
MLA (9th ed.) CitationMehonic, A., et al. "Light-activated Resistance Switching in SiOx RRAM Devices." Applied Physics Letters, vol. 111, no. 23, 2017, p. 1, https://doi.org/10.1063/1.5009069.
Warning: These citations may not always be 100% accurate.