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Light-activated resistance switching in SiOx RRAM devices.

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Bibliographic Details
Title: Light-activated resistance switching in SiOx RRAM devices.
Authors: Mehonic, A.1, Gerard, T.1, Kenyon, A. J.1
Source: Applied Physics Letters; 12/4/2017, Vol. 111 Issue 23, p1-5, 5p, 1 Diagram, 1 Chart, 2 Graphs
Database: Applied Science & Technology Source
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  Availability: 0
Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 126770075
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 12/4/2017, Vol. 111 Issue 23, p1-5, 5p, 1 Diagram, 1 Chart, 2 Graphs
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      – Type: doi
        Value: 10.1063/1.5009069
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      – Code: eng
        Text: English
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        PageCount: 5
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      – TitleFull: Light-activated resistance switching in SiOx RRAM devices.
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              Text: 12/4/2017
              Type: published
              Y: 2017
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