Qin, G. P., Zhang, H., Li, W. J., Ruan, H. B., Wang, J., Wang, D., . . . Kong, C. Y. (2019). Investigation on the formation mechanism of p-type ZnO: In-N thin films: experiment and theory. Journal of Materials Science: Materials in Electronics, 30(6), 6059. https://doi.org/10.1007/s10854-019-00906-z
Chicago Style (17th ed.) CitationQin, G. P., H. Zhang, W. J. Li, H. B. Ruan, J. Wang, D. Wang, L. Fang, and C. Y. Kong. "Investigation on the Formation Mechanism of P-type ZnO: In-N Thin Films: Experiment and Theory." Journal of Materials Science: Materials in Electronics 30, no. 6 (2019): 6059. https://doi.org/10.1007/s10854-019-00906-z.
MLA (9th ed.) CitationQin, G. P., et al. "Investigation on the Formation Mechanism of P-type ZnO: In-N Thin Films: Experiment and Theory." Journal of Materials Science: Materials in Electronics, vol. 30, no. 6, 2019, p. 6059, https://doi.org/10.1007/s10854-019-00906-z.