Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator. - Verona, C.; Benetti, M.; Cannata, D.; Ciccognani, W.; Colangeli, S.; Di Pietrantonio, F.; Limiti, E.; Marinelli, M.; Verona-Rinati, G. (IEEE Electron Device Letters, 2019)