APA (7th ed.) Citation

Sun, Y., Gu, J., He, W., Wang, Q., Jing, N., Mao, Z., . . . Jiang, L. (2019). Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells. IEEE Transactions on Circuits & Systems. Part II: Express Briefs, 66(5), 753. https://doi.org/10.1109/TCSII.2019.2908243

Chicago Style (17th ed.) Citation

Sun, Yanan, Jiawei Gu, Weifeng He, Qin Wang, Naifeng Jing, Zhigang Mao, Weikang Qian, and Li Jiang. "Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells." IEEE Transactions on Circuits & Systems. Part II: Express Briefs 66, no. 5 (2019): 753. https://doi.org/10.1109/TCSII.2019.2908243.

MLA (9th ed.) Citation

Sun, Yanan, et al. "Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells." IEEE Transactions on Circuits & Systems. Part II: Express Briefs, vol. 66, no. 5, 2019, p. 753, https://doi.org/10.1109/TCSII.2019.2908243.