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Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.

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Title: Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.
Authors: Sun, Yanan1, sunyanan@sjtu.edu.cn, Gu, Jiawei1, He, Weifeng1, hewf@sjtu.edu.cn, Wang, Qin1, Jing, Naifeng1, Mao, Zhigang1, Qian, Weikang2, Jiang, Li3
Source: IEEE Transactions on Circuits & Systems. Part II: Express Briefs; May2019, Vol. 66 Issue 5, p753-757, 5p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 136254001
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.
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  Data: <searchLink fieldCode="AU" term="%22Sun%2C+Yanan%22">Sun, Yanan</searchLink><relatesTo>1</relatesTo>, <i>sunyanan@sjtu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Gu%2C+Jiawei%22">Gu, Jiawei</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22He%2C+Weifeng%22">He, Weifeng</searchLink><relatesTo>1</relatesTo>, <i>hewf@sjtu.edu.cn</i><br /><searchLink fieldCode="AU" term="%22Wang%2C+Qin%22">Wang, Qin</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Jing%2C+Naifeng%22">Jing, Naifeng</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Mao%2C+Zhigang%22">Mao, Zhigang</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Qian%2C+Weikang%22">Qian, Weikang</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Jiang%2C+Li%22">Jiang, Li</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Circuits+%26+Systems%2E+Part+II%3A+Express+Briefs%22">IEEE Transactions on Circuits & Systems. Part II: Express Briefs</searchLink>; May2019, Vol. 66 Issue 5, p753-757, 5p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=136254001
RecordInfo BibRecord:
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    Identifiers:
      – Type: doi
        Value: 10.1109/TCSII.2019.2908243
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 753
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      – TitleFull: Energy-Efficient Nonvolatile SRAM Design Based on Resistive Switching Multi-Level Cells.
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            NameFull: Sun, Yanan
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            NameFull: Gu, Jiawei
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            NameFull: He, Weifeng
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            NameFull: Wang, Qin
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            NameFull: Jing, Naifeng
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            NameFull: Mao, Zhigang
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            NameFull: Qian, Weikang
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            – D: 01
              M: 05
              Text: May2019
              Type: published
              Y: 2019
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          Titles:
            – TitleFull: IEEE Transactions on Circuits & Systems. Part II: Express Briefs
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