Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations. - Matsumoto, Tsubasa; Kato, Hiromitsu; Makino, Toshiharu; Ogura, Masahiko; Takeuchi, Daisuke; Yamasaki, Satoshi; Inokuma, Takao; Tokuda, Norio (Applied Physics Letters, 2019)