APA (7th ed.) Citation

Lin, Y., Lu, Y., Chang, T., Liao, J., Lin, C., Jin, F., . . . Kuo, T. (2019). A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs. IEEE Transactions on Electron Devices, 66(8), 3286. https://doi.org/10.1109/TED.2019.2925104

Chicago Style (17th ed.) Citation

Lin, Yun-Hsuan, et al. "A Study of Effects of Metal Gate Composition on Performance in Advanced N-MOSFETs." IEEE Transactions on Electron Devices 66, no. 8 (2019): 3286. https://doi.org/10.1109/TED.2019.2925104.

MLA (9th ed.) Citation

Lin, Yun-Hsuan, et al. "A Study of Effects of Metal Gate Composition on Performance in Advanced N-MOSFETs." IEEE Transactions on Electron Devices, vol. 66, no. 8, 2019, p. 3286, https://doi.org/10.1109/TED.2019.2925104.