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A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs.

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Title: A Study of Effects of Metal Gate Composition on Performance in Advanced n-MOSFETs.
Authors: Lin, Yun-Hsuan1, Lu, Ying-Hsin1, Chang, Ting-Chang1, tcchang3708@gmail.com, Liao, Jih-Chien2, Lin, Chein-Yu3, Jin, Fu-Yuan1, Lin, Yu-Shan1, Ciou, Fong-Min1, Chang, Yen-Cheng1, Chang, Kai-Chun1, Hung, Wei-Chun1, Chen, Kuan-Hsu1, Yeh, Chien-Hung3, Kuo, Ting-Tzu3
Source: IEEE Transactions on Electron Devices; Aug2019, Vol. 66 Issue 8, p3286-3289, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 138462844
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Electron+Devices%22">IEEE Transactions on Electron Devices</searchLink>; Aug2019, Vol. 66 Issue 8, p3286-3289, 4p
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        Value: 10.1109/TED.2019.2925104
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      – Code: eng
        Text: English
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              Text: Aug2019
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