APA (7th ed.) Citation

Grivickas, P., Ščajev, P., Kazuchits, N., Mazanik, A., Korolik, O., Voss, L. F., . . . Grivickas, V. (2020). Carrier recombination parameters in diamond after surface boron implantation and annealing. Journal of Applied Physics, 127(24), 1. https://doi.org/10.1063/5.0004881

Chicago Style (17th ed.) Citation

Grivickas, P., et al. "Carrier Recombination Parameters in Diamond After Surface Boron Implantation and Annealing." Journal of Applied Physics 127, no. 24 (2020): 1. https://doi.org/10.1063/5.0004881.

MLA (9th ed.) Citation

Grivickas, P., et al. "Carrier Recombination Parameters in Diamond After Surface Boron Implantation and Annealing." Journal of Applied Physics, vol. 127, no. 24, 2020, p. 1, https://doi.org/10.1063/5.0004881.