APA (7th ed.) Citation

Frye, C. D., Funaro, D., Conway, A. M., Hall, D. L., Grivickas, P. V., Bora, M., & Voss, L. F. (2021). High temperature isotropic and anisotropic etching of silicon carbide using forming gas. Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, 39(1), 1. https://doi.org/10.1116/6.0000533

Chicago Style (17th ed.) Citation

Frye, C. D., Devin Funaro, A. M. Conway, D. L. Hall, P. V. Grivickas, M. Bora, and L. F. Voss. "High Temperature Isotropic and Anisotropic Etching of Silicon Carbide Using Forming Gas." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films 39, no. 1 (2021): 1. https://doi.org/10.1116/6.0000533.

MLA (9th ed.) Citation

Frye, C. D., et al. "High Temperature Isotropic and Anisotropic Etching of Silicon Carbide Using Forming Gas." Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films, vol. 39, no. 1, 2021, p. 1, https://doi.org/10.1116/6.0000533.