High temperature isotropic and anisotropic etching of silicon carbide using forming gas.
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| Title: | High temperature isotropic and anisotropic etching of silicon carbide using forming gas. |
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| Authors: | Frye, C. D.1, frye6@llnl.gov, Funaro, Devin1, Conway, A. M.1, Hall, D. L.1, Grivickas, P. V.1, Bora, M.1, Voss, L. F.1 |
| Source: | Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan2021, Vol. 39 Issue 1, p1-6, 6p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07342101 |
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| DOI: | 10.1116/6.0000533 |
