View in EDS

High temperature isotropic and anisotropic etching of silicon carbide using forming gas.

Saved in:
Bibliographic Details
Title: High temperature isotropic and anisotropic etching of silicon carbide using forming gas.
Authors: Frye, C. D.1, frye6@llnl.gov, Funaro, Devin1, Conway, A. M.1, Hall, D. L.1, Grivickas, P. V.1, Bora, M.1, Voss, L. F.1
Source: Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan2021, Vol. 39 Issue 1, p1-6, 6p
Database: Applied Science & Technology Source
Be the first to leave a comment!
You must be logged in first