Kanneboina, V., Madaka, R., & Agarwal, P. (2021). Stepwise tuning of the doping and thickness of a-Si: H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells. Journal of Materials Science: Materials in Electronics, 32(4), 4457. https://doi.org/10.1007/s10854-020-05187-5
Chicago Style (17th ed.) CitationKanneboina, Venkanna, Ramakrishna Madaka, and Pratima Agarwal. "Stepwise Tuning of the Doping and Thickness of A-Si: H(p) Emitter Layer to Improve the Performance of C-Si(n)/a-Si:H(p) Heterojunction Solar Cells." Journal of Materials Science: Materials in Electronics 32, no. 4 (2021): 4457. https://doi.org/10.1007/s10854-020-05187-5.
MLA (9th ed.) CitationKanneboina, Venkanna, et al. "Stepwise Tuning of the Doping and Thickness of A-Si: H(p) Emitter Layer to Improve the Performance of C-Si(n)/a-Si:H(p) Heterojunction Solar Cells." Journal of Materials Science: Materials in Electronics, vol. 32, no. 4, 2021, p. 4457, https://doi.org/10.1007/s10854-020-05187-5.