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Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells.

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Title: Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells.
Authors: Kanneboina, Venkanna1, Madaka, Ramakrishna1, Agarwal, Pratima1,2, pratima@iitg.ac.in
Source: Journal of Materials Science: Materials in Electronics; Feb2021, Vol. 32 Issue 4, p4457-4465, 9p
Database: Applied Science & Technology Source
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  Data: Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells.
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      – Type: doi
        Value: 10.1007/s10854-020-05187-5
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      – Code: eng
        Text: English
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        PageCount: 9
        StartPage: 4457
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      – TitleFull: Stepwise tuning of the doping and thickness of a-Si:H(p) emitter layer to improve the performance of c-Si(n)/a-Si:H(p) heterojunction solar cells.
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            NameFull: Kanneboina, Venkanna
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            NameFull: Madaka, Ramakrishna
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            NameFull: Agarwal, Pratima
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              Text: Feb2021
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              Y: 2021
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              Value: 32
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            – TitleFull: Journal of Materials Science: Materials in Electronics
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