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The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD.

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Title: The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD.
Authors: Prayogi, Soni1,2, prayogi.sp@gmail.com, Cahyono, Yoyok1, Iqballudin, Irsyad3, Stchakovsky, Michel3, Darminto, D.1,4
Source: Journal of Materials Science: Materials in Electronics; Mar2021, Vol. 32 Issue 6, p7609-7618, 10p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 149472507
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PubType: Academic Journal
PubTypeId: academicJournal
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Materials+Science%3A+Materials+in+Electronics%22">Journal of Materials Science: Materials in Electronics</searchLink>; Mar2021, Vol. 32 Issue 6, p7609-7618, 10p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=149472507
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        Value: 10.1007/s10854-021-05477-6
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      – Code: eng
        Text: English
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        PageCount: 10
        StartPage: 7609
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      – TitleFull: The effect of adding an active layer to the structure of a-Si: H solar cells on the efficiency using RF-PECVD.
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            NameFull: Prayogi, Soni
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            NameFull: Cahyono, Yoyok
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            NameFull: Iqballudin, Irsyad
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              Text: Mar2021
              Type: published
              Y: 2021
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              Value: 32
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