APA (7th ed.) Citation

Selvidge, J., Hughes, E. T., Norman, J. C., Shang, C., Kennedy, M. J., Dumont, M., . . . Mukherjee, K. (2021). Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures. Applied Physics Letters, 118(19), 1. https://doi.org/10.1063/5.0052316

Chicago Style (17th ed.) Citation

Selvidge, Jennifer, et al. "Reduced Dislocation Growth Leads to Long Lifetime InAs Quantum Dot Lasers on Silicon at High Temperatures." Applied Physics Letters 118, no. 19 (2021): 1. https://doi.org/10.1063/5.0052316.

MLA (9th ed.) Citation

Selvidge, Jennifer, et al. "Reduced Dislocation Growth Leads to Long Lifetime InAs Quantum Dot Lasers on Silicon at High Temperatures." Applied Physics Letters, vol. 118, no. 19, 2021, p. 1, https://doi.org/10.1063/5.0052316.